STMicroelectronics, Inc. Single IGBTs STGP30H60DF

Description
IGBT 600V 60A 260W TO220
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Description
IGBT 600V 60A 260W TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGP30H60DF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP30H60DF
Single IGBTs STGP30H60DF
IGBT 600V 60A 260W TO220

IGBT 600V 60A 260W TO220

Supplier's Site Datasheet
Single IGBTs - 497-13583-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13583-5-ND
Single IGBTs 497-13583-5-ND
IGBT Trench Field Stop 600V 60A 260W Through Hole TO-220

IGBT Trench Field Stop 600V 60A 260W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1017701-STGP30H60DF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1017701-STGP30H60DF
Discrete Semiconductor Products - Transistors - IGBTs - Single 1017701-STGP30H60DF
Win Source Part Number: 1017701-STGP30H60DF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 50 Power - Max: 260 W Reverse Recovery Time (trr): 110 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Switching Energy: 350µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 105 nC Td (on/off) @ 25°C: 50ns/160ns Test Condition: 400V, 30A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13583-5 Base Product Number: STGP30

Win Source Part Number: 1017701-STGP30H60DF
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 50
Power - Max: 260 W
Reverse Recovery Time (trr): 110 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Switching Energy: 350µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 105 nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13583-5
Base Product Number: STGP30

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGP30H60DF
IGBT Transistors STGP30H60DF
IGBT Transistors 600V 30A High Speed Trench Gate IGBT

IGBT Transistors 600V 30A High Speed Trench Gate IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP30H60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP30H60DF
Discrete Semiconductor Products - Transistors - IGBTs STGP30H60DF
IGBT 600V 60A 260W TO220

IGBT 600V 60A 260W TO220

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGP30H60DF 497-13583-5-ND 1017701-STGP30H60DF STGP30H60DF STGP30H60DF
Product Name Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
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