STMicroelectronics, Inc. Single IGBTs STGP20M65DF2

Description
IGBT TRENCH 650V 40A TO220
  • Single IGBTs - STGP20M65DF2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - STGP20M65DF2 - 1041052-STGP20M65DF2 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - 497-17909-ND - DigiKey
    DigiKey
  • Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant Stmicroelectronics - 69AH2733 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGP20M65DF2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT TRENCH 650V 40A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGP20M65DF2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP20M65DF2
Single IGBTs STGP20M65DF2
IGBT TRENCH 650V 40A TO220

IGBT TRENCH 650V 40A TO220

Supplier's Site Datasheet
IGBTs - Single - STGP20M65DF2 - 1041052-STGP20M65DF2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGP20M65DF2
1041052-STGP20M65DF2
IGBTs - Single - STGP20M65DF2 1041052-STGP20M65DF2
Manufacturer: STMicroelectronics Win Source Part Number: 1041052-STGP20M65DF2 Mounting: Through Hole Reverse Recovery Time (trr): 166ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 63nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 166W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 140μJ (on), 560μJ (off) Turn-on and Turn-off delay time: 26ns/108ns Testing Conditions: 400V, 20A, 12 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1041052-STGP20M65DF2
Mounting: Through Hole
Reverse Recovery Time (trr): 166ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 63nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 166W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Total Switching Energy(Ets): 140μJ (on), 560μJ (off)
Turn-on and Turn-off delay time: 26ns/108ns
Testing Conditions: 400V, 20A, 12 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - 497-17909-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-17909-ND
Single IGBTs 497-17909-ND
IGBT Trench Field Stop 650V 40A 166W Through Hole TO-220

IGBT Trench Field Stop 650V 40A 166W Through Hole TO-220

Buy Now Datasheet
Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant Stmicroelectronics - 69AH2733 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant Stmicroelectronics
69AH2733
Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant Stmicroelectronics 69AH2733
IGBT, 650V, 40A, 175DEG C, 166W ROHS COMPLIANT: YES

IGBT, 650V, 40A, 175DEG C, 166W ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGP20M65DF2
IGBT Transistors STGP20M65DF2
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP20M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP20M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGP20M65DF2
IGBT TRENCH 650V 40A TO220

IGBT TRENCH 650V 40A TO220

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGP20M65DF2 1041052-STGP20M65DF2 497-17909-ND 69AH2733 STGP20M65DF2 STGP20M65DF2
Product Name Single IGBTs IGBTs - Single - STGP20M65DF2 Single IGBTs Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3 TO-3
VCE(on) 2 volts
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