Trench gate field-stop IGBT M series, 650 V 20 A low loss Product overview: STGP20M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 20 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 20 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP20M65DF2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1041052-STGP20M65DF2
Mounting: Through Hole
Reverse Recovery Time (trr): 166ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 63nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 166W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Total Switching Energy(Ets): 140μJ (on), 560μJ (off)
Turn-on and Turn-off delay time: 26ns/108ns
Testing Conditions: 400V, 20A, 12 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
IGBT Trench Field Stop 650V 40A 166W Through Hole TO-220
IGBT TRENCH 650V 40A TO220
IGBT TRENCH 650V 40A TO220
IGBT, 650V, 40A, 175DEG C, 166W ROHS COMPLIANT: YES
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGP20M65DF2 | 1041052-STGP20M65DF2 | 497-17909-ND | STGP20M65DF2 | STGP20M65DF2 | 69AH2733 | STGP20M65DF2 |
| Product Name | 650 V 20 A IGBT Transistor | IGBTs - Single - STGP20M65DF2 | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant Stmicroelectronics | IGBT Transistors |
| VCE(on) | 2 volts | ||||||
| PD | 166000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
