IGBT 600V 40A 130W Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1103038-STGP19NC60SD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 54.5nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 130W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 1.9V @ 15V, 12A
Total Switching Energy(Ets): 135μJ (on), 815μJ (off)
Turn-on and Turn-off delay time: 17.5ns/175ns
Testing Conditions: 480V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
IGBT 600V 40A 130W TO220
IGBT 600V 40A 130W TO220
IGBT Transistors N-chnl 600V-20A Med Freq
| DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-7013-5-ND | 1103038-STGP19NC60SD | 761-STGP19NC60SD | STGP19NC60SD | STGP19NC60SD |
| Product Name | Single IGBTs | IGBTs - Single - STGP19NC60SD | IGBT 600V 40A 130W TO220 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | |
| VCE(on) | 1.9 volts | ||||
| PD | 130000 milliwatts | 130000 milliwatts |
