STMicroelectronics, Inc. IGBTs - Single - STGP19NC60SD STGP19NC60SD

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103038-STGP19NC60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 54.5nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 130W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 1.9V @ 15V, 12A Total Switching Energy(Ets): 135μJ (on), 815μJ (off) Turn-on and Turn-off delay time: 17.5ns/175ns Testing Conditions: 480V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103038-STGP19NC60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 54.5nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 130W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 1.9V @ 15V, 12A Total Switching Energy(Ets): 135μJ (on), 815μJ (off) Turn-on and Turn-off delay time: 17.5ns/175ns Testing Conditions: 480V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGP19NC60SD - 1103038-STGP19NC60SD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGP19NC60SD
1103038-STGP19NC60SD
IGBTs - Single - STGP19NC60SD 1103038-STGP19NC60SD
Manufacturer: STMicroelectronics Win Source Part Number: 1103038-STGP19NC60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 54.5nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 130W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 1.9V @ 15V, 12A Total Switching Energy(Ets): 135μJ (on), 815μJ (off) Turn-on and Turn-off delay time: 17.5ns/175ns Testing Conditions: 480V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103038-STGP19NC60SD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 54.5nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 130W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 1.9V @ 15V, 12A
Total Switching Energy(Ets): 135μJ (on), 815μJ (off)
Turn-on and Turn-off delay time: 17.5ns/175ns
Testing Conditions: 480V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - 497-7013-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-7013-5-ND
Single IGBTs 497-7013-5-ND
IGBT 600V 40A 130W Through Hole TO-220

IGBT 600V 40A 130W Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGP19NC60SD
IGBT Transistors STGP19NC60SD
IGBT Transistors N-chnl 600V-20A Med Freq

IGBT Transistors N-chnl 600V-20A Med Freq

Buy Now Datasheet
IGBT 600V 40A 130W TO220 - 761-STGP19NC60SD - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 40A 130W TO220
761-STGP19NC60SD
IGBT 600V 40A 130W TO220 761-STGP19NC60SD
IGBT 600V 40A 130W TO220

IGBT 600V 40A 130W TO220

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - STGP19NC60SD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP19NC60SD
Discrete Semiconductor Products - Transistors - IGBTs STGP19NC60SD
IGBT 600V 40A 130W TO220

IGBT 600V 40A 130W TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103038-STGP19NC60SD 497-7013-5-ND STGP19NC60SD 761-STGP19NC60SD STGP19NC60SD
Product Name IGBTs - Single - STGP19NC60SD Single IGBTs IGBT Transistors IGBT 600V 40A 130W TO220 Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.9 volts
PD 130000 milliwatts 130000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220 TO-220; TO-220-3
Packing Method Rail; Tube; Tube/Rail Tube Tube; Tube Tube; Tube
Unlock Full Specs
to access all available technical data