STMicroelectronics, Inc. Single IGBTs STGP19NC60KD

Description
IGBT 600V 35A 125W TO220
Request a Quote Datasheet
Description
IGBT 600V 35A 125W TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGP19NC60KD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGP19NC60KD
Single IGBTs STGP19NC60KD
IGBT 600V 35A 125W TO220

IGBT 600V 35A 125W TO220

Supplier's Site Datasheet
Singapore
20 A 600 V IGBT Transistor
279-STGP19NC60KD
20 A 600 V IGBT Transistor 279-STGP19NC60KD
20 A, 600 V short circuit rugged IGBT Product overview: STGP19NC60KD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP19NC60KD can be used for catalog matching and distributor lookup.

20 A, 600 V short circuit rugged IGBT Product overview: STGP19NC60KD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP19NC60KD can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - 497-8439-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-8439-5-ND
Single IGBTs 497-8439-5-ND
IGBT 600V 35A 125W Through Hole TO-220

IGBT 600V 35A 125W Through Hole TO-220

Buy Now Datasheet
IGBTs - Single - STGP19NC60KD - 083853-STGP19NC60KD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGP19NC60KD
083853-STGP19NC60KD
IGBTs - Single - STGP19NC60KD 083853-STGP19NC60KD
Manufacturer: STMicroelectronics Win Source Part Number: 083853-STGP19NC60KD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 55nC Family Name: STGP19NC60KD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 35A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2.75V @ 15V, 12A Total Switching Energy(Ets): 165μJ (on), 255μJ (off) Turn-on and Turn-off delay time: 30ns/105ns Testing Conditions: 480V, 12A, 10 Ohm, 15V Alternative Parts (Cross-Reference): BUP402; IXSP16N60; SGP20N60RUFTU; IXSP20N60B2D1SN ; Introduction Date: May 08, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 083853-STGP19NC60KD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 55nC
Family Name: STGP19NC60KD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2.75V @ 15V, 12A
Total Switching Energy(Ets): 165μJ (on), 255μJ (off)
Turn-on and Turn-off delay time: 30ns/105ns
Testing Conditions: 480V, 12A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): BUP402; IXSP16N60; SGP20N60RUFTU; IXSP20N60B2D1SN ;
Introduction Date: May 08, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
STGP19NC60KD
Triode/MOS Tube/Transistor >> IGBTs STGP19NC60KD
125W 35A 600V TO-220 IGBTs ROHS

125W 35A 600V TO-220 IGBTs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGP19NC60KD
IGBT Transistors STGP19NC60KD
IGBT Transistors 20 A - 600 V - short circuit rugged IGBT

IGBT Transistors 20 A - 600 V - short circuit rugged IGBT

Buy Now Datasheet
Transistor - 110306623 - Radwell International
Willingboro, NJ, United States
Transistor
110306623
Transistor 110306623
INSULATED GATE BIPOLAR TRANSISTOR, 35A, 600V, N-CHANNEL, TO-220AB, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 35A, 600V, N-CHANNEL, TO-220AB, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - STGP19NC60KD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP19NC60KD
Discrete Semiconductor Products - Transistors - IGBTs STGP19NC60KD
20 A, 600 V short circuit rugged

20 A, 600 V short circuit rugged

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number STGP19NC60KD 279-STGP19NC60KD 497-8439-5-ND 083853-STGP19NC60KD STGP19NC60KD STGP19NC60KD 110306623 STGP19NC60KD
Product Name Single IGBTs 20 A 600 V IGBT Transistor Single IGBTs IGBTs - Single - STGP19NC60KD Triode/MOS Tube/Transistor >> IGBTs IGBT Transistors Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220
PD 125000 milliwatts 125000 milliwatts 125000 milliwatts
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