STMicroelectronics, Inc. Single IGBTs STGP12NB60KD

Description
IGBT 600V 30A 125W Through Hole TO-220
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Description
IGBT 600V 30A 125W Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single IGBTs - STGP12NB60KD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
STGP12NB60KD-ND
Single IGBTs STGP12NB60KD-ND
IGBT 600V 30A 125W Through Hole TO-220

IGBT 600V 30A 125W Through Hole TO-220

Buy Now Datasheet
IGBTs - Single - STGP12NB60KD - 066381-STGP12NB60KD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGP12NB60KD
066381-STGP12NB60KD
IGBTs - Single - STGP12NB60KD 066381-STGP12NB60KD
Manufacturer: STMicroelectronics Win Source Part Number: 066381-STGP12NB60KD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 80ns Input Type: Standard Gate Charge: 54nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2.8V @ 15V, 12A Total Switching Energy(Ets): 258μJ (off) Turn-on and Turn-off delay time: 25ns/96ns Testing Conditions: 480V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066381-STGP12NB60KD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 80ns
Input Type: Standard
Gate Charge: 54nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 12A
Total Switching Energy(Ets): 258μJ (off)
Turn-on and Turn-off delay time: 25ns/96ns
Testing Conditions: 480V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP12NB60KD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP12NB60KD
Discrete Semiconductor Products - Transistors - IGBTs STGP12NB60KD
IGBT 600V 30A 125W TO220

IGBT 600V 30A 125W TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGP12NB60KD-ND 066381-STGP12NB60KD STGP12NB60KD
Product Name Single IGBTs IGBTs - Single - STGP12NB60KD Discrete Semiconductor Products - Transistors - IGBTs
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
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