STMicroelectronics, Inc. Single IGBTs STGP12NB60HD

Description
IGBT 600V 30A 125W Through Hole TO-220
Request a Quote Datasheet
Description
IGBT 600V 30A 125W Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - STGP12NB60HD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
STGP12NB60HD-ND
Single IGBTs STGP12NB60HD-ND
IGBT 600V 30A 125W Through Hole TO-220

IGBT 600V 30A 125W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277332-STGP12NB60HD - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277332-STGP12NB60HD
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277332-STGP12NB60HD
Win Source Part Number: 1277332-STGP12NB60HD Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: PowerMESH™ Package: Tube Standard Package: 1,000 Power - Max: 125 W Reverse Recovery Time (trr): 80 ns Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A Switching Energy: 210µJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 5ns/91ns Test Condition: 480V, 12A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STGP12 Product Status: Obsolete

Win Source Part Number: 1277332-STGP12NB60HD
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: PowerMESH™
Package: Tube
Standard Package: 1,000
Power - Max: 125 W
Reverse Recovery Time (trr): 80 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Switching Energy: 210µJ (off)
Input Type: Standard
Gate Charge: 68 nC
Td (on/off) @ 25°C: 5ns/91ns
Test Condition: 480V, 12A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGP12
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGP12NB60HD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGP12NB60HD
Discrete Semiconductor Products - Transistors - IGBTs STGP12NB60HD
IGBT 600V 30A 125W TO220

IGBT 600V 30A 125W TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number STGP12NB60HD-ND 1277332-STGP12NB60HD STGP12NB60HD
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs
TJ 150 C (302 F) 150 C (302 F)
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