Manufacturer: STMicroelectronics
Win Source Part Number: 1103033-STGP10NC60HD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 22ns
Input Type: Standard
Gate Charge: 19.2nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 65W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 5A
Total Switching Energy(Ets): 31.8μJ (on), 95μJ (off)
Turn-on and Turn-off delay time: 14.2ns/72ns
Testing Conditions: 390V, 5A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
IGBT 600V 20A 65W Through Hole TO-220
600V 7A IGBT TO-220 Through Hole Transistor Product overview: STGP10NC60HD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 7A, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 7A, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGP10NC60HD can be used for catalog matching and distributor lookup.
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TRANSISTOR, IGBT, 9A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 1103033-STGP10NC60HD | 497-5118-5-ND | 279-STGP10NC60HD | STGP10NC60HD | 761-STGP10NC60HD | STGP10NC60HD | 49036053 |
| Product Name | IGBTs - Single - STGP10NC60HD | Single IGBTs | Through-Hole 600V 7A TO-220 IGBT Transistor | IGBT Transistors | IGBT 600V 20A 65W TO220 | Discrete Semiconductor Products - Transistors - IGBTs | Transistor |
| VCE(on) | 2.5 volts | 1.9 volts | |||||
| PD | 65000 milliwatts | 65000 milliwatts | 56000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | 30 A | ||||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube |