IGBT 600V 29A 80W Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 130068-STGP10NB60SD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 37ns
Input Type: Standard
Gate Charge: 33nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 29A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 80W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 1.75V @ 15V, 10A
Total Switching Energy(Ets): 600μJ (on), 5mJ (off)
Turn-on and Turn-off delay time: 700ns/1.2μs
Testing Conditions: 480V, 10A, 1 kOhm, 15V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
IGBT 600V 29A 80W TO220
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| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGP10NB60SD | 497-STGP10NB60SD-ND | 130068-STGP10NB60SD | STGP10NB60SD | STGP10NB60SD |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - STGP10NB60SD | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
