The STGIPN3H60-H is a 3 A, 600 V, 3-phase IGBT inverter bridge intelligent power module designed for motor drive applications. It integrates six IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, featuring optimized switching for low electromagnetic interference. The module is housed in an NDIP-26L package with dimensions of 29.05 to 29.25 mm in length, 12.35 to 12.55 mm in width, and a height ranging from 4.40 mm to 6.10 mm. It supports 3.3 V, 5 V, and 15 V CMOS/TTL logic inputs, includes an internal bootstrap diode, undervoltage lockout, interlocking, and smart shutdown functions, and operates with a junction temperature range of -40 to 150 °C and a case temperature range of -40 to 125 °C. The thermal resistance from junction to ambient is 50 °C/W.
SLLIMM-nano small low-loss intelligent molded module IPM, 3 A, 600 V 3-phase IGBT inverter bridge Product overview: STGIPN3H60-H from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3 A, 600 V. Search-friendly keywords include IGBT Transistor, Power Driver Modules, electronic component, datasheet, replacement part, 3 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 296-STGIPN3H60-H can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 296-STGIPN3H60-H |
| Product Name | 3 A 600 V IGBT Transistor |
| PD | 8000 milliwatts |
