IGBT Trench Field Stop 600V 10A 24W Through Hole TO-220FP
IGBT, SINGLE, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:24W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
TRENCH GATE FIELD-STOP IGBT, H S
TRENCH GATE FIELD-STOP IGBT, H S
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-16481-5-ND | 45AC7588 | STGF5H60DF | STGF5H60DF | 761-STGF5H60DF |
| Product Name | Single IGBTs | Igbt, Single, 600V, 10A, To-220Fp; Continuous Collector Current Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | TRENCH GATE FIELD-STOP IGBT, H S |
| TJ | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |||
| Packing Method | Tube | Tube; Tube | Tube; Tube | ||
| Structure | Trench Field Stop |
