Trench gate field-stop IGBT M series, 650 V 30 A low loss Product overview: STGF30M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGF30M65DF2 can be used for catalog matching and distributor lookup.
IGBT TRENCH 650V 60A TO220FP
IGBT Trench Field Stop 650V 60A 38W Through Hole TO-220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 1040947-STGF30M65DF2
Mounting: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 80nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 38W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Total Switching Energy(Ets): 300μJ (on), 960μJ (off)
Turn-on and Turn-off delay time: 31.6ns/115ns
Testing Conditions: 400V, 30A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
IGBT TRENCH 650V 60A TO220FP
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
IGBT, 650V, 60A, 175DEG C, 38W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGF30M65DF2 | STGF30M65DF2 | 497-19151-ND | 1040947-STGF30M65DF2 | STGF30M65DF2 | STGF30M65DF2 | 69AH2729 |
| Product Name | 650 V 30 A IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - STGF30M65DF2 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, 650V, 60A, 175Deg C, 38W Rohs Compliant Stmicroelectronics |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220FP | TO-3 | |||
| Packing Method | Tube | Tube; Tube |
