STMicroelectronics, Inc. Single IGBTs STGF20M65DF2

Description
IGBT Trench Field Stop 650V 40A 32.6W Through Hole TO-220FP
  • Single IGBTs - 497-17319-ND - DigiKey
    DigiKey
  • Single IGBTs - STGF20M65DF2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - STGF20M65DF2 - 1040944-STGF20M65DF2 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - STGF20M65DF2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Igbt, 650V, 40A, 175Deg C, 32.6W Rohs Compliant Stmicroelectronics - 69AH2728 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 40A 32.6W Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-17319-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-17319-ND
Single IGBTs 497-17319-ND
IGBT Trench Field Stop 650V 40A 32.6W Through Hole TO-220FP

IGBT Trench Field Stop 650V 40A 32.6W Through Hole TO-220FP

Buy Now Datasheet
Single IGBTs - STGF20M65DF2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGF20M65DF2
Single IGBTs STGF20M65DF2
IGBT TRENCH 650V 40A TO220FP

IGBT TRENCH 650V 40A TO220FP

Supplier's Site Datasheet
IGBTs - Single - STGF20M65DF2 - 1040944-STGF20M65DF2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGF20M65DF2
1040944-STGF20M65DF2
IGBTs - Single - STGF20M65DF2 1040944-STGF20M65DF2
Manufacturer: STMicroelectronics Win Source Part Number: 1040944-STGF20M65DF2 Mounting: Through Hole Reverse Recovery Time (trr): 166ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 63nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 32.6W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 140μJ (on), 560μJ (off) Turn-on and Turn-off delay time: 26ns/108ns Testing Conditions: 400V, 20A, 12 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1040944-STGF20M65DF2
Mounting: Through Hole
Reverse Recovery Time (trr): 166ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 63nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 32.6W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Total Switching Energy(Ets): 140μJ (on), 560μJ (off)
Turn-on and Turn-off delay time: 26ns/108ns
Testing Conditions: 400V, 20A, 12 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGF20M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGF20M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGF20M65DF2
IGBT TRENCH 650V 40A TO220FP

IGBT TRENCH 650V 40A TO220FP

Supplier's Site
Igbt, 650V, 40A, 175Deg C, 32.6W Rohs Compliant Stmicroelectronics - 69AH2728 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 650V, 40A, 175Deg C, 32.6W Rohs Compliant Stmicroelectronics
69AH2728
Igbt, 650V, 40A, 175Deg C, 32.6W Rohs Compliant Stmicroelectronics 69AH2728
IGBT, 650V, 40A, 175DEG C, 32.6W ROHS COMPLIANT: YES

IGBT, 650V, 40A, 175DEG C, 32.6W ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGF20M65DF2
IGBT Transistors STGF20M65DF2
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-17319-ND STGF20M65DF2 1040944-STGF20M65DF2 STGF20M65DF2 69AH2728 STGF20M65DF2
Product Name Single IGBTs Single IGBTs IGBTs - Single - STGF20M65DF2 Discrete Semiconductor Products - Transistors - IGBTs Igbt, 650V, 40A, 175Deg C, 32.6W Rohs Compliant Stmicroelectronics IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-3
Packing Method Tube Tube; Tube
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