Trench gate field-stop IGBT, H series 600 V, 15 A high speed Product overview: STGF15H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 15 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 15 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGF15H60DF can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 30A 30W Through Hole TO-220FP
IGBT 600V 30A 30W TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 042917-STGF15H60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 103ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 81nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 30W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2V @ 15V, 15A
Total Switching Energy(Ets): 136μJ (on), 207μJ (off)
Turn-on and Turn-off delay time: 24.5ns/118ns
Testing Conditions: 400V, 15A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
IGBT 600V 30A 30W TO220FP
IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors Trench gate H series 600V 15A HiSpd
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGF15H60DF | 497-14276-5-ND | STGF15H60DF | 042917-STGF15H60DF | STGF15H60DF | 26AH0171 | STGF15H60DF |
| Product Name | 600 V 15 A IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - STGF15H60DF | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 600V, 30A, 175Deg C, 30W; Dc Collector Current Stmicroelectronics | IGBT Transistors |
| PD | 30000 milliwatts | 30000 milliwatts | 30000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220FP | TO-3; TO-220 |
