STMicroelectronics, Inc. Single IGBTs STGF15H60DF

Description
IGBT 600V 30A 30W TO220FP
  • Single IGBTs - STGF15H60DF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - STGF15H60DF - 042917-STGF15H60DF - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - 497-14276-5-ND - DigiKey
    DigiKey
  • Igbt, 600V, 30A, 175Deg C, 30W; Dc Collector Current Stmicroelectronics - 26AH0171 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGF15H60DF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT 600V 30A 30W TO220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGF15H60DF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGF15H60DF
Single IGBTs STGF15H60DF
IGBT 600V 30A 30W TO220FP

IGBT 600V 30A 30W TO220FP

Supplier's Site Datasheet
IGBTs - Single - STGF15H60DF - 042917-STGF15H60DF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGF15H60DF
042917-STGF15H60DF
IGBTs - Single - STGF15H60DF 042917-STGF15H60DF
Manufacturer: STMicroelectronics Win Source Part Number: 042917-STGF15H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 103ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 81nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 30W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2V @ 15V, 15A Total Switching Energy(Ets): 136μJ (on), 207μJ (off) Turn-on and Turn-off delay time: 24.5ns/118ns Testing Conditions: 400V, 15A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 042917-STGF15H60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 103ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 81nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 30W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2V @ 15V, 15A
Total Switching Energy(Ets): 136μJ (on), 207μJ (off)
Turn-on and Turn-off delay time: 24.5ns/118ns
Testing Conditions: 400V, 15A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - 497-14276-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-14276-5-ND
Single IGBTs 497-14276-5-ND
IGBT Trench Field Stop 600V 30A 30W Through Hole TO-220FP

IGBT Trench Field Stop 600V 30A 30W Through Hole TO-220FP

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGF15H60DF
IGBT Transistors STGF15H60DF
IGBT Transistors Trench gate H series 600V 15A HiSpd

IGBT Transistors Trench gate H series 600V 15A HiSpd

Buy Now Datasheet
Igbt, 600V, 30A, 175Deg C, 30W; Dc Collector Current Stmicroelectronics - 26AH0171 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 600V, 30A, 175Deg C, 30W; Dc Collector Current Stmicroelectronics
26AH0171
Igbt, 600V, 30A, 175Deg C, 30W; Dc Collector Current Stmicroelectronics 26AH0171
IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGF15H60DF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGF15H60DF
Discrete Semiconductor Products - Transistors - IGBTs STGF15H60DF
IGBT 600V 30A 30W TO220FP

IGBT 600V 30A 30W TO220FP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGF15H60DF 042917-STGF15H60DF 497-14276-5-ND STGF15H60DF 26AH0171 STGF15H60DF
Product Name Single IGBTs IGBTs - Single - STGF15H60DF Single IGBTs IGBT Transistors Igbt, 600V, 30A, 175Deg C, 30W; Dc Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack TO-3; TO-220
VCE(on) 2 volts
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