STMicroelectronics, Inc. Single IGBTs STGF10NC60SD

Description
IGBT 600V 10A 25W Through Hole TO-220FP
Request a Quote Datasheet
Description
IGBT 600V 10A 25W Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-10003-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-10003-5-ND
Single IGBTs 497-10003-5-ND
IGBT 600V 10A 25W Through Hole TO-220FP

IGBT 600V 10A 25W Through Hole TO-220FP

Buy Now Datasheet
IGBTs - Single - STGF10NC60SD - 1103023-STGF10NC60SD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGF10NC60SD
1103023-STGF10NC60SD
IGBTs - Single - STGF10NC60SD 1103023-STGF10NC60SD
Manufacturer: STMicroelectronics Win Source Part Number: 1103023-STGF10NC60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 22ns Input Type: Standard Gate Charge: 18nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 25W Pulsed Collector Current: 25A Collector-emitter saturation voltage(Max): 1.65V @ 15V, 5A Total Switching Energy(Ets): 60μJ (on), 340μJ (off) Turn-on and Turn-off delay time: 19ns/160ns Testing Conditions: 390V, 5A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103023-STGF10NC60SD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 22ns
Input Type: Standard
Gate Charge: 18nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 25W
Pulsed Collector Current: 25A
Collector-emitter saturation voltage(Max): 1.65V @ 15V, 5A
Total Switching Energy(Ets): 60μJ (on), 340μJ (off)
Turn-on and Turn-off delay time: 19ns/160ns
Testing Conditions: 390V, 5A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
IGBT 600V 10A 25W TP220FP - 761-STGF10NC60SD - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 10A 25W TP220FP
761-STGF10NC60SD
IGBT 600V 10A 25W TP220FP 761-STGF10NC60SD
IGBT 600V 10A 25W TP220FP

IGBT 600V 10A 25W TP220FP

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - STGF10NC60SD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGF10NC60SD
Discrete Semiconductor Products - Transistors - IGBTs STGF10NC60SD
IGBT 600V 10A 25W TP220FP

IGBT 600V 10A 25W TP220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-10003-5-ND 1103023-STGF10NC60SD 761-STGF10NC60SD STGF10NC60SD
Product Name Single IGBTs IGBTs - Single - STGF10NC60SD IGBT 600V 10A 25W TP220FP Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
VCE(on) 1.65 volts 1.45 volts
PD 25000 milliwatts 25000 milliwatts
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