STMicroelectronics, Inc. Single IGBTs STGF10NC60HD

Description
IGBT 600V 9A 24W Through Hole TO-220FP
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Description
IGBT 600V 9A 24W Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - STGF10NC60HD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
STGF10NC60HD-ND
Single IGBTs STGF10NC60HD-ND
IGBT 600V 9A 24W Through Hole TO-220FP

IGBT 600V 9A 24W Through Hole TO-220FP

Buy Now Datasheet
IGBTs - Single - STGF10NC60HD - 1103022-STGF10NC60HD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGF10NC60HD
1103022-STGF10NC60HD
IGBTs - Single - STGF10NC60HD 1103022-STGF10NC60HD
Manufacturer: STMicroelectronics Win Source Part Number: 1103022-STGF10NC60HD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 22ns Input Type: Standard Gate Charge: 19.2nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 9A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 24W Pulsed Collector Current: 30A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 5A Total Switching Energy(Ets): 31.8μJ (on), 95μJ (off) Turn-on and Turn-off delay time: 14.2ns/72ns Testing Conditions: 390V, 5A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103022-STGF10NC60HD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 22ns
Input Type: Standard
Gate Charge: 19.2nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 9A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 24W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 5A
Total Switching Energy(Ets): 31.8μJ (on), 95μJ (off)
Turn-on and Turn-off delay time: 14.2ns/72ns
Testing Conditions: 390V, 5A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGF10NC60HD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGF10NC60HD
Discrete Semiconductor Products - Transistors - IGBTs STGF10NC60HD
IGBT 600V 9A 24W TO220FP

IGBT 600V 9A 24W TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number STGF10NC60HD-ND 1103022-STGF10NC60HD STGF10NC60HD
Product Name Single IGBTs IGBTs - Single - STGF10NC60HD Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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