STMicroelectronics, Inc. IGBTs - Single - STGF10NB60SD STGF10NB60SD

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066373-STGF10NB60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 37ns Input Type: Standard Gate Charge: 33nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 23A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 25W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 1.75V @ 15V, 10A Total Switching Energy(Ets): 600μJ (on), 5mJ (off) Turn-on and Turn-off delay time: 700ns/1.2μs Testing Conditions: 480V, 10A, 1 kOhm, 15V Alternative Parts (Cross-Reference): AOTF10B60D; NGTB10N60FG; GT20J321(Q); Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066373-STGF10NB60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 37ns Input Type: Standard Gate Charge: 33nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 23A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 25W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 1.75V @ 15V, 10A Total Switching Energy(Ets): 600μJ (on), 5mJ (off) Turn-on and Turn-off delay time: 700ns/1.2μs Testing Conditions: 480V, 10A, 1 kOhm, 15V Alternative Parts (Cross-Reference): AOTF10B60D; NGTB10N60FG; GT20J321(Q); Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGF10NB60SD - 066373-STGF10NB60SD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGF10NB60SD
066373-STGF10NB60SD
IGBTs - Single - STGF10NB60SD 066373-STGF10NB60SD
Manufacturer: STMicroelectronics Win Source Part Number: 066373-STGF10NB60SD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 37ns Input Type: Standard Gate Charge: 33nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 23A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 25W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 1.75V @ 15V, 10A Total Switching Energy(Ets): 600μJ (on), 5mJ (off) Turn-on and Turn-off delay time: 700ns/1.2μs Testing Conditions: 480V, 10A, 1 kOhm, 15V Alternative Parts (Cross-Reference): AOTF10B60D; NGTB10N60FG; GT20J321(Q); Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066373-STGF10NB60SD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 37ns
Input Type: Standard
Gate Charge: 33nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 23A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 25W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 1.75V @ 15V, 10A
Total Switching Energy(Ets): 600μJ (on), 5mJ (off)
Turn-on and Turn-off delay time: 700ns/1.2μs
Testing Conditions: 480V, 10A, 1 kOhm, 15V
Alternative Parts (Cross-Reference): AOTF10B60D; NGTB10N60FG; GT20J321(Q);
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - STGF10NB60SD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGF10NB60SD
Single IGBTs STGF10NB60SD
IGBT 600V 23A 25W TO220FP

IGBT 600V 23A 25W TO220FP

Supplier's Site Datasheet
Singapore
600V 10A TO-220 IGBT Transistor
279-STGF10NB60SD
600V 10A TO-220 IGBT Transistor 279-STGF10NB60SD
600V 10A IGBT TO-220, Soft/Fast Recovery Diode Product overview: STGF10NB60SD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 10A, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGF10NB60SD can be used for catalog matching and distributor lookup.

600V 10A IGBT TO-220, Soft/Fast Recovery Diode Product overview: STGF10NB60SD from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 10A, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGF10NB60SD can be used for catalog matching and distributor lookup.

Supplier's Site
IGBTs - 8772873 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
8772873
IGBTs 8772873
IGBT 16A 600V Soft & Fast Diode TO-220FP

IGBT 16A 600V Soft & Fast Diode TO-220FP

Supplier's Site
IGBTs - 8772873P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT 16A 600V Soft & Fast Diode TO-220FP

IGBT 16A 600V Soft & Fast Diode TO-220FP

Supplier's Site
IGBTs - 1688877 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1688877
IGBTs 1688877
IGBT 16A 600V Soft & Fast Diode TO-220FP

IGBT 16A 600V Soft & Fast Diode TO-220FP

Supplier's Site
Single IGBTs - 497-16201-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-16201-5-ND
Single IGBTs 497-16201-5-ND
IGBT 600V 23A 25W Through Hole TO-220FP

IGBT 600V 23A 25W Through Hole TO-220FP

Buy Now Datasheet
Transistor - 38965142 - Radwell International
Willingboro, NJ, United States
Transistor
38965142
Transistor 38965142
TRANSISTOR, IGBT, 600V, 10A, 25W, THROUGH HOLE, TO-220FP. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, IGBT, 600V, 10A, 25W, THROUGH HOLE, TO-220FP. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - STGF10NB60SD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGF10NB60SD
Discrete Semiconductor Products - Transistors - IGBTs STGF10NB60SD
IGBT 600V 23A 25W TO220FP

IGBT 600V 23A 25W TO220FP

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGF10NB60SD
IGBT Transistors STGF10NB60SD
IGBT Transistors N-Ch 600 Volt 10 Amp

IGBT Transistors N-Ch 600 Volt 10 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 066373-STGF10NB60SD STGF10NB60SD 279-STGF10NB60SD 8772873 8772873P 497-16201-5-ND 38965142 STGF10NB60SD STGF10NB60SD
Product Name IGBTs - Single - STGF10NB60SD Single IGBTs 600V 10A TO-220 IGBT Transistor IGBTs IGBTs Single IGBTs Transistor Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
VCE(on) 1.75 volts
PD 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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