STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Modules STGE200NB60S

Description
Win Source Part Number: 1277483-STGE200NB60S Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Series: PowerMESH™ Package: Tube Standard Package: 10 Power - Max: 600 W Configuration: Single Input: Standard Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 200 A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V NTC Thermistor: No Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-6731-5,STGE200NB 60S Base Product Number: STGE200
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Description
Win Source Part Number: 1277483-STGE200NB60S Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Series: PowerMESH™ Package: Tube Standard Package: 10 Power - Max: 600 W Configuration: Single Input: Standard Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 200 A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V NTC Thermistor: No Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-6731-5,STGE200NB 60S Base Product Number: STGE200
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Modules - 1277483-STGE200NB60S - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Modules
1277483-STGE200NB60S
Discrete Semiconductor Products - Transistors - IGBTs - Modules 1277483-STGE200NB60S
Win Source Part Number: 1277483-STGE200NB60S Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Series: PowerMESH™ Package: Tube Standard Package: 10 Power - Max: 600 W Configuration: Single Input: Standard Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 200 A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V NTC Thermistor: No Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-6731-5,STGE200NB 60S Base Product Number: STGE200

Win Source Part Number: 1277483-STGE200NB60S
Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules
Series: PowerMESH™
Package: Tube
Standard Package: 10
Power - Max: 600 W
Configuration: Single
Input: Standard
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-6731-5,STGE200NB60S
Base Product Number: STGE200

Buy Now Datasheet
IGBT Modules - 497-6731-5-ND - DigiKey
Thief River Falls, MN, United States
IGBT Modules
497-6731-5-ND
IGBT Modules 497-6731-5-ND
IGBT Module Single 600V 200A 600W Chassis Mount ISOTOP

IGBT Module Single 600V 200A 600W Chassis Mount ISOTOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGE200NB60S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGE200NB60S
Discrete Semiconductor Products - Transistors - IGBTs STGE200NB60S
IGBT MOD 600V 200A 600W ISOTOP

IGBT MOD 600V 200A 600W ISOTOP

Supplier's Site
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins - 761-STGE200NB60S - Utmel Electronic Limited
Hong Kong, China
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
761-STGE200NB60S
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins 761-STGE200NB60S
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins

STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
STGE200NB60S
IGBT Modules STGE200NB60S
IGBT Modules N-Ch 600 Volt 150Amp

IGBT Modules N-Ch 600 Volt 150Amp

Buy Now Datasheet
N Channel Igbt, Powermesh, 600V, 200A, Isotop; Continuous Collector Current Stmicroelectronics - 57P0953 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Igbt, Powermesh, 600V, 200A, Isotop; Continuous Collector Current Stmicroelectronics
57P0953
N Channel Igbt, Powermesh, 600V, 200A, Isotop; Continuous Collector Current Stmicroelectronics 57P0953
N CHANNEL IGBT, PowerMESH, 600V, 200A, ISOTOP; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.2V; Power Dissipation:600W; Collector Emitter Voltage Max:600V; No. of Pins:4Pins; Product Range:-; MSL:- RoHS Compliant: Yes

N CHANNEL IGBT, PowerMESH, 600V, 200A, ISOTOP; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.2V; Power Dissipation:600W; Collector Emitter Voltage Max:600V; No. of Pins:4Pins; Product Range:-; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Igbt Single Transistor, 200 A, 1.2 V, 600 W, 600 V, Isotop, 4 Rohs Compliant Stmicroelectronics - 24M7922 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 200 A, 1.2 V, 600 W, 600 V, Isotop, 4 Rohs Compliant Stmicroelectronics
24M7922
Igbt Single Transistor, 200 A, 1.2 V, 600 W, 600 V, Isotop, 4 Rohs Compliant Stmicroelectronics 24M7922
IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 RoHS Compliant: Yes

IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1277483-STGE200NB60S 497-6731-5-ND STGE200NB60S 761-STGE200NB60S STGE200NB60S 57P0953 24M7922
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Modules IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins IGBT Modules N Channel Igbt, Powermesh, 600V, 200A, Isotop; Continuous Collector Current Stmicroelectronics Igbt Single Transistor, 200 A, 1.2 V, 600 W, 600 V, Isotop, 4 Rohs Compliant Stmicroelectronics
Package Type SOT3 SOT-227-4, miniBLOC TO-3 TO-3
Packing Method Tube; Tube
Polarity N-Channel; N-CHANNEL N-Channel
Transistor Technology / Material SILICON
VCE(on) 1.2 volts
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