600V 200A IGBT Power Module, N-CH, SOT-227 Product overview: STGE200NB60S from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 200A. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 600V, 200A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-STGE200NB60S can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277483-STGE200NB60S
Category: Discrete Semiconductor Products>Transistors
Series: PowerMESH™
Package: Tube
Standard Package: 10
Power - Max: 600 W
Configuration: Single
Input: Standard
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.56 nF @ 25 V
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-6731-5,STGE200NB
Base Product Number: STGE200
IGBT Module Single 600V 200A 600W Chassis Mount ISOTOP
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N CHANNEL IGBT, PowerMESH, 600V, 200A, ISOTOP; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.2V; Power Dissipation:600W; Collector Emitter Voltage Max:600V; No. of Pins:4Pins; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 RoHS Compliant: Yes
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-STGE200NB60S | 1277483-STGE200NB60S | 497-6731-5-ND | 6868348 | 6868348P | STGE200NB60S | STGE200NB60S | 57P0953 | 24M7922 | 761-STGE200NB60S |
| Product Name | 600V 200A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Modules | IGBT Modules | IGBTs | IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Modules | N Channel Igbt, Powermesh, 600V, 200A, Isotop; Continuous Collector Current Stmicroelectronics | Igbt Single Transistor, 200 A, 1.2 V, 600 W, 600 V, Isotop, 4 Rohs Compliant Stmicroelectronics | STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins |
| PD | 600000 milliwatts | 600000 milliwatts | 600000 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3 | SOT-227-4, miniBLOC | Isotop | ISOTOP | TO-3 | TO-3 | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-CHANNEL | |||||||
| Packing Method | Tube; Tube |
