Trench gate field-stop IGBT, M series 650 V, 4 A low loss Product overview: STGD4M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 4 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 4 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGD4M65DF2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK
IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK
IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 897986-STGD4M65DF2
Series: M
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 8 A 68 W Surface Mount DPAK
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: STGD4
Categories: Discrete Semiconductor Products
Case / Package: DPAK
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 90 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 31 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-16963-1, 497-16963-2, 497-16963-6
TRENCH GATE FIELD-STOP IGBT, M S
IGBT Transistors PTD HIGH VOLTAGE
IGBT, 650V, 8A, 175DEG C, 68W ROHS COMPLIANT: YES
TRENCH GATE FIELD-STOP IGBT, M S
| ERSAELECTRONICS PTE. LTD. | DigiKey | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGD4M65DF2 | 497-16963-2-ND | 497-16963-1-ND | 897986-STGD4M65DF2 | STGD4M65DF2 | STGD4M65DF2 | 69AH2727 | STGD4M65DF2 |
| Product Name | 650 V 4 A IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - STGD4M65DF2 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, 650V, 8A, 175Deg C, 68W Rohs Compliant Stmicroelectronics | Single IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
