Manufacturer: STMicroelectronics
Win Source Part Number: 142303-STGD3NB60SDT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 1.7μs
Input Type: Standard
Gate Charge: 18nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: D-Pak
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 48W
Pulsed Collector Current: 25A
Collector-emitter saturation voltage(Max): 1.5V @ 15V, 3A
Total Switching Energy(Ets): 1.15mJ (off)
Turn-on and Turn-off delay time: 125μs/
Testing Conditions: 480V, 3A, 1 kOhm, 15V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
IGBT 600V 6A 48W Surface Mount DPAK
IGBT 600V 6A 48W Surface Mount DPAK
IGBT 600V 6A 48W Surface Mount DPAK
600V 3A N-Ch IGBT, TO-252, Surface Mount Product overview: STGD3NB60SDT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 3A, TO-252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, SMD, 600V, 3A, TO-252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGD3NB60SDT4 can be used for catalog matching and distributor lookup.
IGBT 600V 6A 48W DPAK
IGBT Transistors N-Ch 600 Volt 3 Amp
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 142303-STGD3NB60SDT4 | STGD3NB60SDT4 | 497-4109-6-ND | 497-4109-1-ND | 279-STGD3NB60SDT4 | STGD3NB60SDT4 | 761-STGD3NB60SDT4 | STGD3NB60SDT4 |
| Product Name | IGBTs - Single - STGD3NB60SDT4 | Single IGBTs | Single IGBTs | Single IGBTs | SMD 600V 3A TO-252 IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT 600V 6A 48W DPAK | IGBT Transistors |
| VCE(on) | 1.5 volts | 1.5 volts | ||||||
| PD | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts | |||||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | -65 C (-85 F) | 175 C (347 F) | ||
| Package Type | SOT3; D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | 25 A | |||
| Packing Method | Tape Reel; Reel - TR | Tape Reel | Cut Tape (CT) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) |
