STMicroelectronics, Inc. IGBTs - Single - STGBL6NC60DIT4 STGBL6NC60DIT4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103009-STGBL6NC60DI T4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 23ns Input Type: Standard Gate Charge: 12nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 14A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 56W Pulsed Collector Current: 18A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 3A Total Switching Energy(Ets): 32μJ (on), 24μJ (off) Turn-on and Turn-off delay time: 6.7ns/46ns Testing Conditions: 390V, 3A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103009-STGBL6NC60DI T4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 23ns Input Type: Standard Gate Charge: 12nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 14A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 56W Pulsed Collector Current: 18A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 3A Total Switching Energy(Ets): 32μJ (on), 24μJ (off) Turn-on and Turn-off delay time: 6.7ns/46ns Testing Conditions: 390V, 3A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient
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IGBTs - Single - STGBL6NC60DIT4 - 1103009-STGBL6NC60DIT4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGBL6NC60DIT4
1103009-STGBL6NC60DIT4
IGBTs - Single - STGBL6NC60DIT4 1103009-STGBL6NC60DIT4
Manufacturer: STMicroelectronics Win Source Part Number: 1103009-STGBL6NC60DI T4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 23ns Input Type: Standard Gate Charge: 12nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 14A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 56W Pulsed Collector Current: 18A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 3A Total Switching Energy(Ets): 32μJ (on), 24μJ (off) Turn-on and Turn-off delay time: 6.7ns/46ns Testing Conditions: 390V, 3A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103009-STGBL6NC60DIT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 23ns
Input Type: Standard
Gate Charge: 12nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 14A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 56W
Pulsed Collector Current: 18A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 3A
Total Switching Energy(Ets): 32μJ (on), 24μJ (off)
Turn-on and Turn-off delay time: 6.7ns/46ns
Testing Conditions: 390V, 3A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103009-STGBL6NC60DIT4
Product Name IGBTs - Single - STGBL6NC60DIT4
VCE(on) 2.9 volts
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