STMicroelectronics, Inc. IGBTs - Single - STGB7NC60HDT4 STGB7NC60HDT4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103008-STGB7NC60HDT 4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 37ns Input Type: Standard Gate Charge: 35nC Family Name: STGB7NC60HD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 25A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 80W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 7A Total Switching Energy(Ets): 95μJ (on), 115μJ (off) Turn-on and Turn-off delay time: 18.5ns/72ns Testing Conditions: 390V, 7A, 10 Ohm, 15V Alternative Parts (Cross-Reference): IKB15N60TATMA1; SGB15N60HSATMA1; SGW23N60UFTM; SGW15N60RUFTM; Introduction Date: January 19, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103008-STGB7NC60HDT 4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 37ns Input Type: Standard Gate Charge: 35nC Family Name: STGB7NC60HD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 25A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 80W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 7A Total Switching Energy(Ets): 95μJ (on), 115μJ (off) Turn-on and Turn-off delay time: 18.5ns/72ns Testing Conditions: 390V, 7A, 10 Ohm, 15V Alternative Parts (Cross-Reference): IKB15N60TATMA1; SGB15N60HSATMA1; SGW23N60UFTM; SGW15N60RUFTM; Introduction Date: January 19, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGB7NC60HDT4 - 1103008-STGB7NC60HDT4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGB7NC60HDT4
1103008-STGB7NC60HDT4
IGBTs - Single - STGB7NC60HDT4 1103008-STGB7NC60HDT4
Manufacturer: STMicroelectronics Win Source Part Number: 1103008-STGB7NC60HDT 4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 37ns Input Type: Standard Gate Charge: 35nC Family Name: STGB7NC60HD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 25A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 80W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 7A Total Switching Energy(Ets): 95μJ (on), 115μJ (off) Turn-on and Turn-off delay time: 18.5ns/72ns Testing Conditions: 390V, 7A, 10 Ohm, 15V Alternative Parts (Cross-Reference): IKB15N60TATMA1; SGB15N60HSATMA1; SGW23N60UFTM; SGW15N60RUFTM; Introduction Date: January 19, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103008-STGB7NC60HDT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 37ns
Input Type: Standard
Gate Charge: 35nC
Family Name: STGB7NC60HD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 25A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 80W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 7A
Total Switching Energy(Ets): 95μJ (on), 115μJ (off)
Turn-on and Turn-off delay time: 18.5ns/72ns
Testing Conditions: 390V, 7A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): IKB15N60TATMA1; SGB15N60HSATMA1; SGW23N60UFTM; SGW15N60RUFTM;
Introduction Date: January 19, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - STGB7NC60HDT4 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGB7NC60HDT4
Single IGBTs STGB7NC60HDT4
IGBT 600V 25A 80W D2PAK

IGBT 600V 25A 80W D2PAK

Supplier's Site Datasheet
Single IGBTs - 497-4108-1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-4108-1-ND
Single IGBTs 497-4108-1-ND
IGBT 600V 25A 80W Surface Mount D2PAK

IGBT 600V 25A 80W Surface Mount D2PAK

Buy Now Datasheet
Single IGBTs - 497-4108-6-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-4108-6-ND
Single IGBTs 497-4108-6-ND
IGBT 600V 25A 80W Surface Mount D2PAK

IGBT 600V 25A 80W Surface Mount D2PAK

Buy Now Datasheet
Single IGBTs - 497-4108-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-4108-2-ND
Single IGBTs 497-4108-2-ND
IGBT 600V 25A 80W Surface Mount D2PAK

IGBT 600V 25A 80W Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGB7NC60HDT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB7NC60HDT4
Discrete Semiconductor Products - Transistors - IGBTs STGB7NC60HDT4
IGBT 600V 25A 80W D2PAK

IGBT 600V 25A 80W D2PAK

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGB7NC60HDT4
IGBT Transistors STGB7NC60HDT4
IGBT Transistors N-Ch 600 Volt 14 Amp

IGBT Transistors N-Ch 600 Volt 14 Amp

Buy Now Datasheet
Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current Stmicroelectronics - 59M2166 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current Stmicroelectronics
59M2166
Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current Stmicroelectronics 59M2166
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:80W; Collector Emitter Voltage V(br)ceo:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating RoHS Compliant: Yes

IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:80W; Collector Emitter Voltage V(br)ceo:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103008-STGB7NC60HDT4 STGB7NC60HDT4 497-4108-1-ND 497-4108-6-ND STGB7NC60HDT4 STGB7NC60HDT4 59M2166
Product Name IGBTs - Single - STGB7NC60HDT4 Single IGBTs Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors Igbt, Smd, 600V, 14A, D2-Pak; Dc Collector Current Stmicroelectronics
VCE(on) 2.5 volts
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