STMicroelectronics, Inc. Single IGBTs STGB4M65DF2

Description
IGBT Trench Field Stop 650V 8A 68W Surface Mount D²PAK
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 8A 68W Surface Mount D²PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - 497-16964-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-16964-2-ND
Single IGBTs 497-16964-2-ND
IGBT Trench Field Stop 650V 8A 68W Surface Mount D²PAK

IGBT Trench Field Stop 650V 8A 68W Surface Mount D²PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277367-STGB4M65DF2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277367-STGB4M65DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277367-STGB4M65DF2
Win Source Part Number: 1277367-STGB4M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Power - Max: 68 W Reverse Recovery Time (trr): 133 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 8 A Current - Collector Pulsed (Icm): 16 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Switching Energy: 40µJ (on), 136µJ (off) Input Type: Standard Gate Charge: 15.2 nC Td (on/off) @ 25°C: 12ns/86ns Test Condition: 400V, 4A, 47Ohm, 15V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16964-1,497-1696 4-2,497-16964-6 Base Product Number: STGB4

Win Source Part Number: 1277367-STGB4M65DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: M
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Power - Max: 68 W
Reverse Recovery Time (trr): 133 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 8 A
Current - Collector Pulsed (Icm): 16 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Switching Energy: 40µJ (on), 136µJ (off)
Input Type: Standard
Gate Charge: 15.2 nC
Td (on/off) @ 25°C: 12ns/86ns
Test Condition: 400V, 4A, 47Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16964-1,497-16964-2,497-16964-6
Base Product Number: STGB4

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Discrete Semiconductor Products - Transistors - IGBTs - STGB4M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB4M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGB4M65DF2
TRENCH GATE FIELD-STOP IGBT, M S

TRENCH GATE FIELD-STOP IGBT, M S

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGB4M65DF2
IGBT Transistors STGB4M65DF2
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss

IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-16964-2-ND 1277367-STGB4M65DF2 STGB4M65DF2 STGB4M65DF2
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 175 C (-67 to 347 F)
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