Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R Product overview: STGB30V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB30V60DF can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 60A 258W Surface Mount D2PAK
IGBT Trench Field Stop 600V 60A 258W Surface Mount D2PAK
IGBT Trench Field Stop 600V 60A 258W Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 897982-STGB30V60DF
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 600 V 60 A 258 W Surface Mount D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: STGB30
Categories: Discrete Semiconductor Products
Case / Package: D2PAK
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 27 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -497-15120-6, -497-15120-2, 497-15120-2, 497-15120-1, -497-15120-1, 497-15120-6
IGBT 600V 60A 258W D2PAK
IGBT 600V 60A 258W D2PAK
IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
| ERSAELECTRONICS PTE. LTD. | DigiKey | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGB30V60DF | 497-15120-1-ND | 497-15120-6-ND | 897982-STGB30V60DF | STGB30V60DF | STGB30V60DF | STGB30V60DF |
| Product Name | 600V 60A IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - STGB30V60DF | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs | IGBT Transistors |
| PD | 258000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
