STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single STGB30M65DF2

Description
Win Source Part Number: 962241-STGB30M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Power - Max: 258 W Reverse Recovery Time (trr): 140 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Switching Energy: 300µJ (on), 960µJ (off) Input Type: Standard Gate Charge: 80 nC Td (on/off) @ 25°C: 31.6ns/115ns Test Condition: 400V, 30A, 10Ohm, 15V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IRGS4630DPBF; STGB30V60DF; STGB30H60DF; IGB30N60H3ATMA1; ISL9V5045S3ST-F085; STGB30H60DLFB; ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-15843-2,-497-15 843-6,497-15843-6,49 7-15843-1,497-15843- 2,-497-15843-1 Base Product Number: STGB30
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Description
Win Source Part Number: 962241-STGB30M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Power - Max: 258 W Reverse Recovery Time (trr): 140 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Switching Energy: 300µJ (on), 960µJ (off) Input Type: Standard Gate Charge: 80 nC Td (on/off) @ 25°C: 31.6ns/115ns Test Condition: 400V, 30A, 10Ohm, 15V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IRGS4630DPBF; STGB30V60DF; STGB30H60DF; IGB30N60H3ATMA1; ISL9V5045S3ST-F085; STGB30H60DLFB; ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-15843-2,-497-15 843-6,497-15843-6,49 7-15843-1,497-15843- 2,-497-15843-1 Base Product Number: STGB30
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single - 962241-STGB30M65DF2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
962241-STGB30M65DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single 962241-STGB30M65DF2
Win Source Part Number: 962241-STGB30M65DF2 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Power - Max: 258 W Reverse Recovery Time (trr): 140 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Switching Energy: 300µJ (on), 960µJ (off) Input Type: Standard Gate Charge: 80 nC Td (on/off) @ 25°C: 31.6ns/115ns Test Condition: 400V, 30A, 10Ohm, 15V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IRGS4630DPBF; STGB30V60DF; STGB30H60DF; IGB30N60H3ATMA1; ISL9V5045S3ST-F085; STGB30H60DLFB; ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-15843-2,-497-15 843-6,497-15843-6,49 7-15843-1,497-15843- 2,-497-15843-1 Base Product Number: STGB30

Win Source Part Number: 962241-STGB30M65DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 258 W
Reverse Recovery Time (trr): 140 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 300µJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 80 nC
Td (on/off) @ 25°C: 31.6ns/115ns
Test Condition: 400V, 30A, 10Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IRGS4630DPBF; STGB30V60DF; STGB30H60DF; IGB30N60H3ATMA1; ISL9V5045S3ST-F085; STGB30H60DLFB;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-15843-2,-497-15843-6,497-15843-6,497-15843-1,497-15843-2,-497-15843-1
Base Product Number: STGB30

Buy Now Datasheet
Single IGBTs - STGB30M65DF2 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGB30M65DF2
Single IGBTs STGB30M65DF2
IGBT 650V 30A D2PAK

IGBT 650V 30A D2PAK

Supplier's Site Datasheet
Single IGBTs - 497-15843-1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-15843-1-ND
Single IGBTs 497-15843-1-ND
IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)

IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single IGBTs - 497-15843-6-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-15843-6-ND
Single IGBTs 497-15843-6-ND
IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)

IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single IGBTs - 497-15843-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-15843-2-ND
Single IGBTs 497-15843-2-ND
IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)

IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGB30M65DF2
IGBT Transistors STGB30M65DF2
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss

Buy Now Datasheet
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-263, 3 Rohs Compliant Stmicroelectronics - 52Y7734 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-263, 3 Rohs Compliant Stmicroelectronics
52Y7734
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-263, 3 Rohs Compliant Stmicroelectronics 52Y7734
IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 RoHS Compliant: Yes

IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGB30M65DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB30M65DF2
Discrete Semiconductor Products - Transistors - IGBTs STGB30M65DF2
IGBT 650V 30A D2PAK

IGBT 650V 30A D2PAK

Supplier's Site
IGBT 650V 30A D2PAK - 761-STGB30M65DF2 - Utmel Electronic Limited
Hong Kong, China
IGBT 650V 30A D2PAK
761-STGB30M65DF2
IGBT 650V 30A D2PAK 761-STGB30M65DF2
IGBT 650V 30A D2PAK

IGBT 650V 30A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 962241-STGB30M65DF2 STGB30M65DF2 497-15843-1-ND 497-15843-6-ND STGB30M65DF2 52Y7734 STGB30M65DF2 761-STGB30M65DF2
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Single IGBTs Single IGBTs IGBT Transistors Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-263, 3 Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs IGBT 650V 30A D2PAK
VCES 650 volts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
Packing Method Cut Tape (CT) Tape Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Cut Tape (CT)
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4 suppliers