IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 650V 60A 258W Surface Mount D²PAK (TO-263)
Trench gate field-stop IGBT M series, 650 V 30 A low loss Product overview: STGB30M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB30M65DF2 can be used for catalog matching and distributor lookup.
Win Source Part Number: 962241-STGB30M65DF2
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 258 W
Reverse Recovery Time (trr): 140 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 300µJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 80 nC
Td (on/off) @ 25°C: 31.6ns/115ns
Test Condition: 400V, 30A, 10Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IRGS4630DPBF; STGB30V60DF; STGB30H60DF; IGB30N60H3ATMA1; ISL9V5045S3ST-F085; STGB30H60DLFB;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-15843-2,-497-15
Base Product Number: STGB30
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 RoHS Compliant: Yes
IGBT 650V 30A D2PAK
| DigiKey | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-15843-6-ND | 497-15843-1-ND | 279-STGB30M65DF2 | 962241-STGB30M65DF2 | STGB30M65DF2 | STGB30M65DF2 | 52Y7734 | 761-STGB30M65DF2 | STGB30M65DF2 |
| Product Name | Single IGBTs | Single IGBTs | 650 V 30 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | IGBT Transistors | Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-263, 3 Rohs Compliant Stmicroelectronics | IGBT 650V 30A D2PAK | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | ||||
| Packing Method | Tape Reel | Cut Tape (CT) | Tape Reel; Cut Tape (CT) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Structure | Trench Field Stop | Trench Field Stop |
