IGBT Trench Field Stop 650V 60A 260W Surface Mount D²PAK (TO-263)
Win Source Part Number: 1277371-STGB30H65FB
Category: Discrete Semiconductor Products>Transistors
Series: HB
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 260 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 151µJ (on), 293µJ (off)
Input Type: Standard
Gate Charge: 149 nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGB30
IGBT
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGB30H65FB-ND | 1277371-STGB30H65FB | STGB30H65FB | STGB30H65FB |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
