STMicroelectronics, Inc. Single IGBTs STGB30H60DF

Description
IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK
Request a Quote Datasheet
Description
IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - 497-15119-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-15119-2-ND
Single IGBTs 497-15119-2-ND
IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK

IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277397-STGB30H60DF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277397-STGB30H60DF
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277397-STGB30H60DF
Win Source Part Number: 1277397-STGB30H60DF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Power - Max: 260 W Reverse Recovery Time (trr): 110 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Switching Energy: 350µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 105 nC Td (on/off) @ 25°C: 50ns/160ns Test Condition: 400V, 30A, 10Ohm, 15V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15119-6,-497-151 19-6,497-15119-2,-49 7-15119-1,497-15119- 1,-497-15119-2 Base Product Number: STGB30 Product Status: Obsolete

Win Source Part Number: 1277397-STGB30H60DF
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 260 W
Reverse Recovery Time (trr): 110 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Switching Energy: 350µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 105 nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 400V, 30A, 10Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15119-6,-497-15119-6,497-15119-2,-497-15119-1,497-15119-1,-497-15119-2
Base Product Number: STGB30
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGB30H60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB30H60DF
Discrete Semiconductor Products - Transistors - IGBTs STGB30H60DF
IGBT 600V 60A 260W D2PAK

IGBT 600V 60A 260W D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-15119-2-ND 1277397-STGB30H60DF STGB30H60DF
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F)
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