STMicroelectronics, Inc. IGBTs - Single - STGB20NC60V STGB20NC60V

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103003-STGB20NC60V Packaging: Reel - TR Mounting: SMD (SMT) Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 200W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 20A Total Switching Energy(Ets): 220μJ (on), 330μJ (off) Turn-on and Turn-off delay time: 31ns/100ns Testing Conditions: 390V, 20A, 3.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103003-STGB20NC60V Packaging: Reel - TR Mounting: SMD (SMT) Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 200W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 20A Total Switching Energy(Ets): 220μJ (on), 330μJ (off) Turn-on and Turn-off delay time: 31ns/100ns Testing Conditions: 390V, 20A, 3.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGB20NC60V - 1103003-STGB20NC60V - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGB20NC60V
1103003-STGB20NC60V
IGBTs - Single - STGB20NC60V 1103003-STGB20NC60V
Manufacturer: STMicroelectronics Win Source Part Number: 1103003-STGB20NC60V Packaging: Reel - TR Mounting: SMD (SMT) Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 200W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 20A Total Switching Energy(Ets): 220μJ (on), 330μJ (off) Turn-on and Turn-off delay time: 31ns/100ns Testing Conditions: 390V, 20A, 3.3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103003-STGB20NC60V
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 20A
Total Switching Energy(Ets): 220μJ (on), 330μJ (off)
Turn-on and Turn-off delay time: 31ns/100ns
Testing Conditions: 390V, 20A, 3.3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - 497-7008-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-7008-2-ND
Single IGBTs 497-7008-2-ND
IGBT 600V 60A 200W Surface Mount D2PAK

IGBT 600V 60A 200W Surface Mount D2PAK

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGB20NC60V
IGBT Transistors STGB20NC60V
IGBT Transistors 30 A 600V FAST IGBT

IGBT Transistors 30 A 600V FAST IGBT

Buy Now Datasheet
Igbt, Npn, 600V, 60A, To-263; Dc Collector Current Stmicroelectronics - 07AH6972 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Npn, 600V, 60A, To-263; Dc Collector Current Stmicroelectronics
07AH6972
Igbt, Npn, 600V, 60A, To-263; Dc Collector Current Stmicroelectronics 07AH6972
IGBT, NPN, 600V, 60A, TO-263; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; OperatingRoHS Compliant: Yes

IGBT, NPN, 600V, 60A, TO-263; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; OperatingRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGB20NC60V - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB20NC60V
Discrete Semiconductor Products - Transistors - IGBTs STGB20NC60V
IGBT 600V 60A 200W D2PAK

IGBT 600V 60A 200W D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103003-STGB20NC60V 497-7008-2-ND STGB20NC60V 07AH6972 STGB20NC60V
Product Name IGBTs - Single - STGB20NC60V Single IGBTs IGBT Transistors Igbt, Npn, 600V, 60A, To-263; Dc Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.5 volts
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