20A 442V PowerMESH IGBT, N-Channel, D2PAK, 200W Product overview: STGB20NB41LZT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 442V, 200W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 20A, 442V, 200W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB20NB41LZT4 can be used for catalog matching and distributor lookup.
IGBT 442V 40A 200W D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031194-STGB20NB41LZT
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Standard
Gate Charge: 46nC
Family Name: STGB20NB41LZ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 442V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 4.5V, 20A
Total Switching Energy(Ets): 5mJ (on), 12.9mJ (off)
Turn-on and Turn-off delay time: 1μs/12.1μs
Testing Conditions: 320V, 20A, 1 kOhm, 5V
Alternative Parts (Cross-Reference): HGT1S20N36G3VLS; ISL9V5036S3S_Q; ISL9V5036S3ST_Q;
Introduction Date: October 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
IGBT 442V 40A 200W Surface Mount D2PAK
IGBT 442V 40A 200W Surface Mount D2PAK
IGBT 442V 40A 200W Surface Mount D2PAK
N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 RoHS Compliant: Yes
IGBT Transistors N-Ch Clamped 20 Amp
IGBT 442V 40A 200W D2PAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGB20NB41LZT4 | STGB20NB41LZT4 | 031194-STGB20NB41LZT4 | 497-4351-6-ND | 497-4351-1-ND | 57P0928 | 33X1197 | STGB20NB41LZT4 | STGB20NB41LZT4 |
| Product Name | N-Channel 20A 442V 200W IGBT Transistor | Single IGBTs | IGBTs - Single - STGB20NB41LZT4 | Single IGBTs | Single IGBTs | N Channel Igbt, Powermesh, Clamped, 40A, D2Pak, Full Reel; Continuous Collector Current Stmicroelectronics | Igbt Single Transistor, 40 A, 1.3 V, 200 W, 412 V, To-263, 3 Rohs Compliant Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-3; TO-263; TO-252 (DPAK) |
