STMicroelectronics, Inc. Single IGBTs STGB20NB41LZT4

Description
IGBT 442V 40A 200W Surface Mount D2PAK
Request a Quote Datasheet
Description
IGBT 442V 40A 200W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-4351-6-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-4351-6-ND
Single IGBTs 497-4351-6-ND
IGBT 442V 40A 200W Surface Mount D2PAK

IGBT 442V 40A 200W Surface Mount D2PAK

Buy Now Datasheet
Single IGBTs - 497-4351-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-4351-2-ND
Single IGBTs 497-4351-2-ND
IGBT 442V 40A 200W Surface Mount D2PAK

IGBT 442V 40A 200W Surface Mount D2PAK

Buy Now Datasheet
Single IGBTs - 497-4351-1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-4351-1-ND
Single IGBTs 497-4351-1-ND
IGBT 442V 40A 200W Surface Mount D2PAK

IGBT 442V 40A 200W Surface Mount D2PAK

Buy Now Datasheet
IGBTs - Single - STGB20NB41LZT4 - 031194-STGB20NB41LZT4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGB20NB41LZT4
031194-STGB20NB41LZT4
IGBTs - Single - STGB20NB41LZT4 031194-STGB20NB41LZT4
Manufacturer: STMicroelectronics Win Source Part Number: 031194-STGB20NB41LZT 4 Packaging: Reel - TR Mounting: SMD (SMT) Input Type: Standard Gate Charge: 46nC Family Name: STGB20NB41LZ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 442V Maximum Power Dissipation: 200W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 4.5V, 20A Total Switching Energy(Ets): 5mJ (on), 12.9mJ (off) Turn-on and Turn-off delay time: 1μs/12.1μs Testing Conditions: 320V, 20A, 1 kOhm, 5V Alternative Parts (Cross-Reference): HGT1S20N36G3VLS; ISL9V5036S3S_Q; ISL9V5036S3ST_Q; Introduction Date: October 01, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031194-STGB20NB41LZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Standard
Gate Charge: 46nC
Family Name: STGB20NB41LZ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 442V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 4.5V, 20A
Total Switching Energy(Ets): 5mJ (on), 12.9mJ (off)
Turn-on and Turn-off delay time: 1μs/12.1μs
Testing Conditions: 320V, 20A, 1 kOhm, 5V
Alternative Parts (Cross-Reference): HGT1S20N36G3VLS; ISL9V5036S3S_Q; ISL9V5036S3ST_Q;
Introduction Date: October 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 20A 442V 200W IGBT Transistor
279-STGB20NB41LZT4
N-Channel 20A 442V 200W IGBT Transistor 279-STGB20NB41LZT4
20A 442V PowerMESH IGBT, N-Channel, D2PAK, 200W Product overview: STGB20NB41LZT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 442V, 200W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 20A, 442V, 200W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB20NB41LZT4 can be used for catalog matching and distributor lookup.

20A 442V PowerMESH IGBT, N-Channel, D2PAK, 200W Product overview: STGB20NB41LZT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 442V, 200W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 20A, 442V, 200W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB20NB41LZT4 can be used for catalog matching and distributor lookup.

Supplier's Site
Single IGBTs - STGB20NB41LZT4 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGB20NB41LZT4
Single IGBTs STGB20NB41LZT4
IGBT 442V 40A 200W D2PAK

IGBT 442V 40A 200W D2PAK

Supplier's Site Datasheet
N Channel Igbt, Powermesh, Clamped, 40A, D2Pak, Full Reel; Continuous Collector Current Stmicroelectronics - 57P0928 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Igbt, Powermesh, Clamped, 40A, D2Pak, Full Reel; Continuous Collector Current Stmicroelectronics
57P0928
N Channel Igbt, Powermesh, Clamped, 40A, D2Pak, Full Reel; Continuous Collector Current Stmicroelectronics 57P0928
N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Igbt Single Transistor, 40 A, 1.3 V, 200 W, 412 V, To-263, 3 Rohs Compliant Stmicroelectronics - 33X1197 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 40 A, 1.3 V, 200 W, 412 V, To-263, 3 Rohs Compliant Stmicroelectronics
33X1197
Igbt Single Transistor, 40 A, 1.3 V, 200 W, 412 V, To-263, 3 Rohs Compliant Stmicroelectronics 33X1197
IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 RoHS Compliant: Yes

IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
STGB20NB41LZT4
IGBT Transistors STGB20NB41LZT4
IGBT Transistors N-Ch Clamped 20 Amp

IGBT Transistors N-Ch Clamped 20 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGB20NB41LZT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB20NB41LZT4
Discrete Semiconductor Products - Transistors - IGBTs STGB20NB41LZT4
IGBT 442V 40A 200W D2PAK

IGBT 442V 40A 200W D2PAK

Supplier's Site

Technical Specifications

  DigiKey DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-4351-6-ND 497-4351-1-ND 031194-STGB20NB41LZT4 279-STGB20NB41LZT4 STGB20NB41LZT4 57P0928 33X1197 STGB20NB41LZT4 STGB20NB41LZT4
Product Name Single IGBTs Single IGBTs IGBTs - Single - STGB20NB41LZT4 N-Channel 20A 442V 200W IGBT Transistor Single IGBTs N Channel Igbt, Powermesh, Clamped, 40A, D2Pak, Full Reel; Continuous Collector Current Stmicroelectronics Igbt Single Transistor, 40 A, 1.3 V, 200 W, 412 V, To-263, 3 Rohs Compliant Stmicroelectronics IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB SOT3; D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 TO-3; TO-263; TO-252 (DPAK)
Packing Method Tape Reel Cut Tape (CT) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data