Manufacturer: STMicroelectronics
Win Source Part Number: 1103000-STGB19NC60KD
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 55nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2.75V @ 15V, 12A
Total Switching Energy(Ets): 165μJ (on), 255μJ (off)
Turn-on and Turn-off delay time: 30ns/105ns
Testing Conditions: 480V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
20 A, 600 V short circuit rugged IGBT Product overview: STGB19NC60KDT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB19NC60KDT4 can be used for catalog matching and distributor lookup.
IGBT 600V 35A 125W D2PAK
IGBT 600V 35A 125W Surface Mount D2PAK
IGBT 600V 35A 125W Surface Mount D2PAK
IGBT 600V 35A 125W Surface Mount D2PAK
125W 35A 600V D2PAK IGBTs ROHS
IGBT 600V 35A 125W D2PAK
IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1103000-STGB19NC60KDT4 | 279-STGB19NC60KDT4 | STGB19NC60KDT4 | 497-7007-6-ND | 497-7007-1-ND | STGB19NC60KDT4 | STGB19NC60KDT4 | STGB19NC60KDT4 |
| Product Name | IGBTs - Single - STGB19NC60KDT4 | 20 A 600 V IGBT Transistor | Single IGBTs | Single IGBTs | Single IGBTs | Triode/MOS Tube/Transistor >> IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCE(on) | 2.75 volts | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
