STMicroelectronics, Inc. Single IGBTs STGB19NC60KDT4

Description
IGBT 600V 35A 125W Surface Mount D2PAK
Request a Quote Datasheet
Description
IGBT 600V 35A 125W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-7007-6-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-7007-6-ND
Single IGBTs 497-7007-6-ND
IGBT 600V 35A 125W Surface Mount D2PAK

IGBT 600V 35A 125W Surface Mount D2PAK

Buy Now Datasheet
Single IGBTs - 497-7007-1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-7007-1-ND
Single IGBTs 497-7007-1-ND
IGBT 600V 35A 125W Surface Mount D2PAK

IGBT 600V 35A 125W Surface Mount D2PAK

Buy Now Datasheet
Single IGBTs - 497-7007-2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-7007-2-ND
Single IGBTs 497-7007-2-ND
IGBT 600V 35A 125W Surface Mount D2PAK

IGBT 600V 35A 125W Surface Mount D2PAK

Buy Now Datasheet
Singapore
20 A 600 V IGBT Transistor
279-STGB19NC60KDT4
20 A 600 V IGBT Transistor 279-STGB19NC60KDT4
20 A, 600 V short circuit rugged IGBT Product overview: STGB19NC60KDT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB19NC60KDT4 can be used for catalog matching and distributor lookup.

20 A, 600 V short circuit rugged IGBT Product overview: STGB19NC60KDT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB19NC60KDT4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - STGB19NC60KDT4 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGB19NC60KDT4
Single IGBTs STGB19NC60KDT4
IGBT 600V 35A 125W D2PAK

IGBT 600V 35A 125W D2PAK

Supplier's Site Datasheet
IGBTs - Single - STGB19NC60KDT4 - 1103000-STGB19NC60KDT4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGB19NC60KDT4
1103000-STGB19NC60KDT4
IGBTs - Single - STGB19NC60KDT4 1103000-STGB19NC60KDT4
Manufacturer: STMicroelectronics Win Source Part Number: 1103000-STGB19NC60KD T4 Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 55nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 35A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2.75V @ 15V, 12A Total Switching Energy(Ets): 165μJ (on), 255μJ (off) Turn-on and Turn-off delay time: 30ns/105ns Testing Conditions: 480V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103000-STGB19NC60KDT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 55nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2.75V @ 15V, 12A
Total Switching Energy(Ets): 165μJ (on), 255μJ (off)
Turn-on and Turn-off delay time: 30ns/105ns
Testing Conditions: 480V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
STGB19NC60KDT4
Triode/MOS Tube/Transistor >> IGBTs STGB19NC60KDT4
125W 35A 600V D2PAK IGBTs ROHS

125W 35A 600V D2PAK IGBTs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGB19NC60KDT4
IGBT Transistors STGB19NC60KDT4
IGBT Transistors 20 A - 600 V - short circuit rugged IGBT

IGBT Transistors 20 A - 600 V - short circuit rugged IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGB19NC60KDT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGB19NC60KDT4
Discrete Semiconductor Products - Transistors - IGBTs STGB19NC60KDT4
IGBT 600V 35A 125W D2PAK

IGBT 600V 35A 125W D2PAK

Supplier's Site

Technical Specifications

  DigiKey DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-7007-6-ND 497-7007-1-ND 279-STGB19NC60KDT4 STGB19NC60KDT4 1103000-STGB19NC60KDT4 STGB19NC60KDT4 STGB19NC60KDT4 STGB19NC60KDT4
Product Name Single IGBTs Single IGBTs 20 A 600 V IGBT Transistor Single IGBTs IGBTs - Single - STGB19NC60KDT4 Triode/MOS Tube/Transistor >> IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SOT3; D2PAK
Packing Method Tape Reel Cut Tape (CT) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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