19 A, 600 V, very fast IGBT with Ultrafast diode Product overview: STGB19NC60HDT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 19 A, 600 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 19 A, 600 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB19NC60HDT4 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1102998-STGB19NC60HD
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 53nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 130W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A
Total Switching Energy(Ets): 85μJ (on), 189μJ (off)
Turn-on and Turn-off delay time: 25ns/97ns
Testing Conditions: 390V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
IGBT 600V 40A 130W D2PAK
IGBT 600V 40A 130W Surface Mount D2PAK
IGBT 600V 40A 130W Surface Mount D2PAK
IGBT 600V 40A 130W Surface Mount D2PAK
IGBT Transistors N Ch 600V 19A
IGBT 600V 40A 130W D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGB19NC60HDT4 | 1102998-STGB19NC60HDT4 | STGB19NC60HDT4 | 497-6026-6-ND | 497-6026-1-ND | STGB19NC60HDT4 | STGB19NC60HDT4 |
| Product Name | 19 A 600 V IGBT Transistor | IGBTs - Single - STGB19NC60HDT4 | Single IGBTs | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 130000 milliwatts | 130000 milliwatts |
