Manufacturer: STMicroelectronics
Win Source Part Number: 1261006-STGB18N40LZT
Series: PowerMESH
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Power - Max: 150W
Current - Collector Pulsed (Icm): 40A
Input Type: Logic
Gate Charge: 29nc
Td (on/off) @ 25°C: 650ns/13.5μs
Test Condition: 300V, 10A, 5V
Family Name: STGB18N40LZ
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: D2PAK
Current - Collector (Ic) (Maximum): 30A
Voltage - Collector Emitter Breakdown (Maximum): 420V
Vce(on) (Maximum) @ Vge, Ic: 1.7V @ 4.5V, 10A
Alternative Parts (Cross-Reference): HGT1S20N36G3VLS; ISL9V3036S3S; ISL9V3036S3S_NL;
Introduction Date: January 14, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
IGBT 420V 30A 150W Surface Mount D2PAK
IGBT 420V 30A 150W Surface Mount D2PAK
IGBT 420V 30A 150W Surface Mount D2PAK
IGBT 420V 30A 150W D2PAK
IGBT 420V 30A 150W D2PAK
IGBT Single Transistor, 30 A, 1.35 V, 150 W, 390 V, TO-263, 3 RoHS Compliant: Yes
150W 30A 420V TO-263AB IGBTs ROHS
| Win Source Electronics | DigiKey | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1261006-STGB18N40LZT4 | 497-7006-6-ND | 497-7006-1-ND | STGB18N40LZT4 | 8103485P | STGB18N40LZT4 | 99W9734 | STGB18N40LZT4 |
| Product Name | IGBTs - Single - STGB18N40LZT4 | Single IGBTs | Single IGBTs | Single IGBTs | IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt Single Transistor, 30 A, 1.35 V, 150 W, 390 V, To-263, 3 Rohs Compliant Stmicroelectronics | Triode/MOS Tube/Transistor >> IGBTs |
| VCES | 420 volts | 420 volts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; D2PAK (TO-263) | Automotive | TO-3; TO-263 | TO-263 |
| Packing Method | Tape Reel; Reel - TR | Tape Reel | Cut Tape (CT) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
