TRENCH GATE FIELD-STOP IGBT M SE
IGBT Trench Field Stop 650V 30A 136W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 650V 30A 136W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 650V 30A 136W Surface Mount D²PAK (TO-263)
Trench gate field-stop IGBT M series, 650 V 15 A low loss Product overview: STGB15M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 15 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 15 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB15M65DF2 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1134973-STGB15M65DF2
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 136 W
Reverse Recovery Time (trr): 142 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Switching Energy: 90µJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 45 nC
Td (on/off) @ 25°C: 24ns/93ns
Test Condition: 400V, 15A, 12Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): STGB15M65DF2.;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16507-6,497-1650
Base Product Number: STGB15
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
TRENCH GATE FIELD-STOP IGBT M SE
| ODG (Origin Data Global) | DigiKey | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGB15M65DF2 | 497-16507-1-ND | 497-16507-6-ND | 279-STGB15M65DF2 | 1134973-STGB15M65DF2 | STGB15M65DF2 | STGB15M65DF2 |
| Product Name | Single IGBTs | Single IGBTs | Single IGBTs | 650 V 15 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
