Manufacturer: STMicroelectronics
Win Source Part Number: 1102995-STGB10NC60KD
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 22ns
Input Type: Standard
Gate Charge: 19nC
Family Name: STGB10NC60KD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 65W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 5A
Total Switching Energy(Ets): 55μJ (on), 85μJ (off)
Turn-on and Turn-off delay time: 17ns/72ns
Testing Conditions: 390V, 5A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): SKB10N60A E3045A; IKB10N60T E3045A; IKB10N60TXT; IRGS10B60KDTRL;
Introduction Date: June 14, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
IGBT 600V 20A 65W D2PAK
STGB10NC60KDT4,IGBT,
STGB10NC60KDT4,IGBT,
STGB10NC60KDT4,IGBT,
IGBT 600V 20A 65W Surface Mount D2PAK
IGBT 600V 20A 65W Surface Mount D2PAK
IGBT 600V 20A 65W Surface Mount D2PAK
IGBT 600V 20A 65W D2PAK
65W 20A 600V D2PAK IGBTs ROHS
IGBT Transistors N-channel MOSFET
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1102995-STGB10NC60KDT4 | STGB10NC60KDT4 | 7958975P | 7958975 | 497-5736-6-ND | 497-5736-1-ND | STGB10NC60KDT4 | STGB10NC60KDT4 | STGB10NC60KDT4 |
| Product Name | IGBTs - Single - STGB10NC60KDT4 | Single IGBTs | IGBTs | IGBTs | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Triode/MOS Tube/Transistor >> IGBTs | IGBT Transistors |
| VCE(on) | 2.5 volts | ||||||||
| PD | 65000 milliwatts | 65000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; D2pak (to-263) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
