Manufacturer: STMicroelectronics
Win Source Part Number: 139254-STGB10NB37LZT
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Standard
Gate Charge: 28nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 440V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 1.8V @ 4.5V, 10A
Total Switching Energy(Ets): 2.4mJ (on), 5mJ (off)
Turn-on and Turn-off delay time: 1.3μs/8μs
Testing Conditions: 328V, 10A, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Transistor IGBT N-Ch 440V 20A D2PAK
Transistor IGBT N-Ch 440V 20A D2PAK
Transistor IGBT N-Ch 440V 20A D2PAK
20A, 375V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 Product overview: STGB10NB37LZT4 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 375V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 20A, 375V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB10NB37LZT4 can be used for catalog matching and distributor lookup.
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| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | DigiKey | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 139254-STGB10NB37LZT4 | 6868341 | 6868341P | 279-STGB10NB37LZT4 | STGB10NB37LZT4 | 497-STGB10NB37LZT4TR-ND | 497-STGB10NB37LZT4CT-ND | 70013799 | STGB10NB37LZT4 | STGB10NB37LZT4 | 69AH2722 |
| Product Name | IGBTs - Single - STGB10NB37LZT4 | IGBTs | IGBTs | N-Channel 20A 375V IGBT Transistor | Single IGBTs | Single IGBTs | Single IGBTs | IGBT, N-CHANNEL 20A CLAMP, D2PAK | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Aec-Q101, 18V, 20A, 175Deg C, 125W Rohs Compliant Stmicroelectronics |
| VCE(on) | 1.8 volts | 1.2 volts | |||||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||||||
| TJ | -65 to 175 C (-85 to 347 F) | -65 C (-85 F) | -65 to 175 C (-85 to 347 F) | -65 to 175 C (-85 to 347 F) | -65 to 175 C (-85 to 347 F) | -65 to 175 C (-85 to 347 F) |
