Trench gate field-stop IGBT M series, 650 V 10 A low loss Product overview: STGB10M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 10 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 10 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB10M65DF2 can be used for catalog matching and distributor lookup.
Win Source Part Number: 970307-STGB10M65DF2
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 115 W
Reverse Recovery Time (trr): 96 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 40 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Switching Energy: 120µJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 28 nC
Td (on/off) @ 25°C: 19ns/91ns
Test Condition: 400V, 10A, 22Ohm, 15V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-15844-2,-497-15
Base Product Number: STGB10
IGBT Trench Field Stop 650V 20A 115W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 650V 20A 115W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 650V 20A 115W Surface Mount D²PAK (TO-263)
IGBT Single Transistor, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 RoHS Compliant: Yes
IGBT 650V 10A D2PAK
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGB10M65DF2 | 970307-STGB10M65DF2 | 497-15844-2-ND | 497-15844-1-ND | 52Y7733 | STGB10M65DF2 | STGB10M65DF2 |
| Product Name | 650 V 10 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | Single IGBTs | Igbt Single Transistor, 20 A, 1.55 V, 115 W, 650 V, To-263, 3 Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCES | 650 volts |
