IGBT 600V 20A 115W D2PAK
Trench gate field-stop IGBT, H series 600 V, 10 A high speed Product overview: STGB10H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 10 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 10 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGB10H60DF can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 20A 115W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 600V 20A 115W Surface Mount D²PAK (TO-263)
IGBT Trench Field Stop 600V 20A 115W Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 935351-STGB10H60DF
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 600 V 20 A 115 W Surface Mount D²PAK (TO-263)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: STGB10
Categories: Discrete Semiconductor Products
Case / Package: D2PAK (TO-263)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 27 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-14975-6, -497-14975-2, -497-14975-1, 497-14975-1, -497-14975-6, 497-14975-2
IGBT 600V 20A 115W D2PAK
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGB10H60DF | 279-STGB10H60DF | 497-14975-1-ND | 497-14975-2-ND | 935351-STGB10H60DF | STGB10H60DF | STGB10H60DF |
| Product Name | Single IGBTs | 600 V 10 A IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - STGB10H60DF | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
