The STFW3N170 is an N-channel Power MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 1700 V and a continuous drain current rating of 2.6 A at a case temperature of 25 ¬8C. It has a typical on-resistance of 7 Oc, which is measured at a gate-source voltage of 10 V. The device is housed in a TO-3PF package, which provides enhanced creepage between leads, making it suitable for applications requiring high voltage isolation. This MOSFET is optimized for high-speed switching and has been 100% avalanche tested, ensuring reliability in demanding conditions. The maximum total power dissipation is rated at 63 W, with an operating junction temperature range of -55 ¬8C to 150 ¬8C. The device also features minimized intrinsic capacitances and gate charge, contributing to its efficiency in switching applications. Engineers considering this MOSFET for their projects should note its robust specifications and suitability for high-voltage switching applications.
N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole TO-3PF
MOSFET N-CH 1700V 2.6A ISOWATT
N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package Product overview: STFW3N170 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1700 V, 7 Ohm, 2.6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700 V, 7 Ohm, 2.6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STFW3N170 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 212278-STFW3N170
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: TO-3P-3 Full Pack
Drain-Source Breakdown Voltage: 1700V (1.7kV)
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 13 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 1.7KV, 2.6A, 150DEG C, 63W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 1700V 2.6A ISOWATT
MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-16308-5-ND | STFW3N170 | 278-STFW3N170 | 212278-STFW3N170 | 26AH0159 | STFW3N170 | STFW3N170 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 1700 V 7 Ohm 2.6 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFW3N170 | Mosfet, N-Ch, 1.7Kv, 2.6A, 150Deg C, 63W; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-3; TO-3P-3 Full Pack | TO-3; TO-3P-3 Full Pack | TO-3; SOT3; TO-3PF | TO-3 | TO-3P-3 Full Pack | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 1700 volts | 1700 volts | |||||
| IDSS | 2600 milliamps | 2600 milliamps |
