STMicroelectronics, Inc. Single FETs, MOSFETs STFI10N65K3

Description
N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet
Description
N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13578-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13578-5-ND
Single FETs, MOSFETs 497-13578-5-ND
N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)

N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)

Buy Now Datasheet
FETs - Single - STFI10N65K3 - 1260985-STFI10N65K3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STFI10N65K3
1260985-STFI10N65K3
FETs - Single - STFI10N65K3 1260985-STFI10N65K3
Manufacturer: STMicroelectronics Win Source Part Number: 1260985-STFI10N65K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAKFP (TO-281) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Full Pack, I2Pak Power Dissipation (Maximum): 35W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 1Ohm at 3.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1180pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260985-STFI10N65K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Full Pack, I2Pak
Power Dissipation (Maximum): 35W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 1Ohm at 3.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1180pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFI10N65K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFI10N65K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFI10N65K3
MOSFET N-CH 650V 10A I2PAKFP

MOSFET N-CH 650V 10A I2PAKFP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number 497-13578-5-ND 1260985-STFI10N65K3 STFI10N65K3
Product Name Single FETs, MOSFETs FETs - Single - STFI10N65K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Full Pack, I2PAK TO-220; SOT3 1180 pF @ 25 V
V(BR)DSS 650 volts
QG 42 nC
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