Win Source Part Number: 1096874-STFH13N60M2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™
Package: Tube
Standard Package: 46
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STP18NM60N; FDP12N60NZ; IPL60R299CPAUMA1; STFH18N60M2; STW18N60DM2; FDP10N60NZ;
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16594-5
Base Product Number: STFH13
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 11A TO220FP
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package Product overview: STFH13N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.35 Ohm, 11 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.35 Ohm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STFH13N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP
MOSFET N-CH 600V 11A TO220FP
MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
MOSFET, N-CH, 600V, 11A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096874-STFH13N60M2 | STFH13N60M2 | 278-STFH13N60M2 | 497-16594-5-ND | STFH13N60M2 | STFH13N60M2 | 92Y9449 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 600 V 0.35 Ohm 11 A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 11A, To-220Fp-3; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 25000 milliwatts | 25000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | Through Hole | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
