STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STFH13N60M2

Description
Win Source Part Number: 1096874-STFH13N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 46 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STP18NM60N; FDP12N60NZ; IPL60R299CPAUMA1; STFH18N60M2; STW18N60DM2; FDP10N60NZ; ECCN: EAR99 Fake Threat In the Open Market: 77 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16594-5 Base Product Number: STFH13 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1096874-STFH13N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 46 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STP18NM60N; FDP12N60NZ; IPL60R299CPAUMA1; STFH18N60M2; STW18N60DM2; FDP10N60NZ; ECCN: EAR99 Fake Threat In the Open Market: 77 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16594-5 Base Product Number: STFH13 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1096874-STFH13N60M2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1096874-STFH13N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1096874-STFH13N60M2
Win Source Part Number: 1096874-STFH13N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 46 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STP18NM60N; FDP12N60NZ; IPL60R299CPAUMA1; STFH18N60M2; STW18N60DM2; FDP10N60NZ; ECCN: EAR99 Fake Threat In the Open Market: 77 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16594-5 Base Product Number: STFH13 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1096874-STFH13N60M2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™
Package: Tube
Standard Package: 46
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STP18NM60N; FDP12N60NZ; IPL60R299CPAUMA1; STFH18N60M2; STW18N60DM2; FDP10N60NZ;
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16594-5
Base Product Number: STFH13
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STFH13N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STFH13N60M2
Single FETs, MOSFETs STFH13N60M2
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-16594-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16594-5-ND
Single FETs, MOSFETs 497-16594-5-ND
N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFH13N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFH13N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFH13N60M2
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

Supplier's Site
Mosfet, N-Ch, 600V, 11A, To-220Fp-3; Transistor Polarity Stmicroelectronics - 92Y9449 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, To-220Fp-3; Transistor Polarity Stmicroelectronics
92Y9449
Mosfet, N-Ch, 600V, 11A, To-220Fp-3; Transistor Polarity Stmicroelectronics 92Y9449
MOSFET, N-CH, 600V, 11A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 11A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096874-STFH13N60M2 STFH13N60M2 497-16594-5-ND STFH13N60M2 92Y9449 STFH13N60M2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 11A, To-220Fp-3; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack Through Hole TO-3; TO-220
Transistor Technology / Material MOSFET (Metal Oxide)
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