N-Channel 650V 5A (Tc) 20W (Tc) Through Hole TO-220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 1102981-STF9N65M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 315pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
MOSFET N-CH 650V 5A TO220FP
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-15037-5-ND | 1102981-STF9N65M2 | STF9N65M2 | STF9N65M2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF9N65M2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220FP | TO-220; TO-220-3 Full Pack | |
| V(BR)DSS | 650 volts |
