N-Channel 650V 4A (Tc) 20W (Tc) Through Hole TO-220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 212275-STF6N65M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 9.8nC @ 10V
Max Input Capacitance: 226pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 1.35 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 497-15035-5-ND | 212275-STF6N65M2 | 40Y2601 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF6N65M2 | Power Mosfet, N Channel, 4 A, 650 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel |
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220FP | TO-3 |
| V(BR)DSS | 650 volts |
