STMicroelectronics, Inc. FETs - Single - STF5N62K3 STF5N62K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260976-STF5N62K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 620V Id - Continuous Drain Current: 4.2A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 680pF at 50V
  • FETs - Single - STF5N62K3 - 1260976-STF5N62K3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-12583-5-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 4.2 A, 620 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics - 94T3402 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Ch, 620V, 4.2A, To-220Fp; Channel Type Stmicroelectronics - 21T3997 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF5N62K3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260976-STF5N62K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 620V Id - Continuous Drain Current: 4.2A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 680pF at 50V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STF5N62K3 - 1260976-STF5N62K3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF5N62K3
1260976-STF5N62K3
FETs - Single - STF5N62K3 1260976-STF5N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 1260976-STF5N62K3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 620V Id - Continuous Drain Current: 4.2A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 680pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260976-STF5N62K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 25W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 620V
Id - Continuous Drain Current: 4.2A
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 26nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 680pF at 50V

Buy Now
Single FETs, MOSFETs - 497-12583-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12583-5-ND
Single FETs, MOSFETs 497-12583-5-ND
N-Channel 620V 4.2A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 620V 4.2A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Mosfet Transistor, N Channel, 4.2 A, 620 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics - 94T3402 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 4.2 A, 620 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics
94T3402
Mosfet Transistor, N Channel, 4.2 A, 620 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics 94T3402
MOSFET Transistor, N Channel, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Ch, 620V, 4.2A, To-220Fp; Channel Type Stmicroelectronics - 21T3997 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 620V, 4.2A, To-220Fp; Channel Type Stmicroelectronics
21T3997
Mosfet, N Ch, 620V, 4.2A, To-220Fp; Channel Type Stmicroelectronics 21T3997
MOSFET, N CH, 620V, 4.2A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 620V, 4.2A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF5N62K3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF5N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF5N62K3
MOSFET N-CH 620V 4.2A TO220FP

MOSFET N-CH 620V 4.2A TO220FP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF5N62K3
MOSFET STF5N62K3
MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH 3

MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH 3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260976-STF5N62K3 497-12583-5-ND 94T3402 21T3997 STF5N62K3 STF5N62K3
Product Name FETs - Single - STF5N62K3 Single FETs, MOSFETs Mosfet Transistor, N Channel, 4.2 A, 620 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics Mosfet, N Ch, 620V, 4.2A, To-220Fp; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 620 volts
QG 26 nC
PD 25000 milliwatts
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