STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF42N65M5 STF42N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066358-STF42N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 4650pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 79 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF42N65M5 - 066358-STF42N65M5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STF42N65M5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-8895-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF42N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Power Mosfet, N Channel, 33 A, 650 V, 0.07 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 94T3400 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 650V, 33A, To-220Fp; Channel Type Stmicroelectronics - 09R5982 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 066358-STF42N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 4650pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 79 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF42N65M5 - 066358-STF42N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF42N65M5
066358-STF42N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF42N65M5 066358-STF42N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 066358-STF42N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 4650pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 79 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066358-STF42N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 4650pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 79 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STF42N65M5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF42N65M5
Single FETs, MOSFETs STF42N65M5
MOSFET N-CH 650V 33A TO220FP

MOSFET N-CH 650V 33A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-8895-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8895-5-ND
Single FETs, MOSFETs 497-8895-5-ND
N-Channel 650V 33A (Tc) 40W (Tc) Through Hole TO-220FP

N-Channel 650V 33A (Tc) 40W (Tc) Through Hole TO-220FP

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF42N65M5
MOSFET STF42N65M5
MOSFET N-CH 65V 33A MDMESH

MOSFET N-CH 65V 33A MDMESH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF42N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF42N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF42N65M5
MOSFET N-CH 650V 33A TO220FP

MOSFET N-CH 650V 33A TO220FP

Supplier's Site
Power Mosfet, N Channel, 33 A, 650 V, 0.07 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 94T3400 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 33 A, 650 V, 0.07 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics
94T3400
Power Mosfet, N Channel, 33 A, 650 V, 0.07 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics 94T3400
Power MOSFET, N Channel, 33 A, 650 V, 0.07 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 33 A, 650 V, 0.07 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 650V, 33A, To-220Fp; Channel Type Stmicroelectronics - 09R5982 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 650V, 33A, To-220Fp; Channel Type Stmicroelectronics
09R5982
Mosfet, N Channel, 650V, 33A, To-220Fp; Channel Type Stmicroelectronics 09R5982
MOSFET, N CHANNEL, 650V, 33A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 650V, 33A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066358-STF42N65M5 STF42N65M5 497-8895-5-ND STF42N65M5 STF42N65M5 94T3400 09R5982
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF42N65M5 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Power Mosfet, N Channel, 33 A, 650 V, 0.07 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics Mosfet, N Channel, 650V, 33A, To-220Fp; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
PD 40000 milliwatts 40000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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