STMicroelectronics, Inc. FETs - Single - STF34NM60ND STF34NM60ND

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260971-STF34NM60ND Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: STF34NM60ND Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 40W Alternative Parts (Cross-Reference): IXKP20N60C5M; IPA65R150CFDXK; IPA60R125CPXK; Introduction Date: November 04, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 110mOhm at 14.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 80.4nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2785pF at 50V
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260971-STF34NM60ND Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: STF34NM60ND Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 40W Alternative Parts (Cross-Reference): IXKP20N60C5M; IPA65R150CFDXK; IPA60R125CPXK; Introduction Date: November 04, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 110mOhm at 14.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 80.4nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2785pF at 50V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STF34NM60ND - 1260971-STF34NM60ND - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF34NM60ND
1260971-STF34NM60ND
FETs - Single - STF34NM60ND 1260971-STF34NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 1260971-STF34NM60ND Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: STF34NM60ND Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 40W Alternative Parts (Cross-Reference): IXKP20N60C5M; IPA65R150CFDXK; IPA60R125CPXK; Introduction Date: November 04, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 110mOhm at 14.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 80.4nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2785pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260971-STF34NM60ND
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: STF34NM60ND
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 40W
Alternative Parts (Cross-Reference): IXKP20N60C5M; IPA65R150CFDXK; IPA60R125CPXK;
Introduction Date: November 04, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 29A
Rds On (Maximum) at Id, Vgs: 110mOhm at 14.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 80.4nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 2785pF at 50V

Buy Now
Single FETs, MOSFETs - 497-12248-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12248-ND
Single FETs, MOSFETs 497-12248-ND
N-Channel 600V 29A (Tc) 40W (Tc) Through Hole TO-220FP

N-Channel 600V 29A (Tc) 40W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF34NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF34NM60ND
Single FETs, MOSFETs STF34NM60ND
MOSFET N-CH 600V 29A TO220FP

MOSFET N-CH 600V 29A TO220FP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF34NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF34NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF34NM60ND
MOSFET N-CH 600V 29A TO220FP

MOSFET N-CH 600V 29A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II

MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II

Buy Now Datasheet
Mosfet, N Ch, 600V, 29A, To-220Fp; Channel Type Stmicroelectronics - 87T3761 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 29A, To-220Fp; Channel Type Stmicroelectronics
87T3761
Mosfet, N Ch, 600V, 29A, To-220Fp; Channel Type Stmicroelectronics 87T3761
MOSFET, N CH, 600V, 29A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 29A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260971-STF34NM60ND 497-12248-ND STF34NM60ND STF34NM60ND STF34NM60ND 87T3761
Product Name FETs - Single - STF34NM60ND Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Ch, 600V, 29A, To-220Fp; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
QG 80.4 nC
PD 40000 milliwatts 40000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data