STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF31N65M5 STF31N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260967-STF31N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Family Name: STF31N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 816pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 148 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IPA65R190C6; IPA60R099C6XKSA1; IPA65R190E6XK; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260967-STF31N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Family Name: STF31N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 816pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 148 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IPA65R190C6; IPA60R099C6XKSA1; IPA65R190E6XK; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF31N65M5 - 1260967-STF31N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF31N65M5
1260967-STF31N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF31N65M5 1260967-STF31N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1260967-STF31N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Family Name: STF31N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 816pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 148 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): IPA65R190C6; IPA60R099C6XKSA1; IPA65R190E6XK; Introduction Date: February 23, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1260967-STF31N65M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Family Name: STF31N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220FP
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 816pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 30W (Tc)
Rds On (Maximum) @ Id, Vgs: 148 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IPA65R190C6; IPA60R099C6XKSA1; IPA65R190E6XK;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
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Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13101-5-ND - DigiKey
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Single FETs, MOSFETs
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Single FETs, MOSFETs 497-13101-5-ND
N-Channel 650V 22A (Tc) 30W (Tc) Through Hole TO-220FP

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF31N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF31N65M5
MOSFET N-CH 650V 22A TO220FP

MOSFET N-CH 650V 22A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260967-STF31N65M5 STF31N65M5 497-13101-5-ND STF31N65M5 STF31N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF31N65M5 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 45 nC
PD 30000 milliwatts 30000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-220; TO-247; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube; Tube
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