MOSFET N-CH 600V 24A TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 1260961-STF28N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: STF28N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220FP
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 30W (Tc)
Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): TK25A60X,S5X(M; TK25A60X; TK25A60X5;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
N-Channel 600V 24A (Tc) 30W (Tc) Through Hole TO-220FP
MOSFET N-CH 600V 24A TO220FP
MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STF28N60M2 | 1260961-STF28N60M2 | 497-14216-5-ND | STF28N60M2 | STF28N60M2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF28N60M2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 600 volts | ||||
| IDSS | 24000 milliamps | ||||
| PD | 30000 milliwatts | 30000 milliwatts |
