STMicroelectronics, Inc. FETs - Single - STF140N6F7 STF140N6F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260934-STF140N6F7 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 33W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 70A Rds On (Maximum) at Id, Vgs: 3.5mOhm at 35A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V
  • FETs - Single - STF140N6F7 - 1260934-STF140N6F7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-16970-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STF140N6F7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 60V, 70A, 175Deg C, 33W; Transistor Polarity Stmicroelectronics - 26AH0165 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF140N6F7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260934-STF140N6F7 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 33W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 70A Rds On (Maximum) at Id, Vgs: 3.5mOhm at 35A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STF140N6F7 - 1260934-STF140N6F7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF140N6F7
1260934-STF140N6F7
FETs - Single - STF140N6F7 1260934-STF140N6F7
Manufacturer: STMicroelectronics Win Source Part Number: 1260934-STF140N6F7 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 33W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 70A Rds On (Maximum) at Id, Vgs: 3.5mOhm at 35A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260934-STF140N6F7
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 33W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 70A
Rds On (Maximum) at Id, Vgs: 3.5mOhm at 35A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V

Buy Now
Single FETs, MOSFETs - 497-16970-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16970-ND
Single FETs, MOSFETs 497-16970-ND
N-Channel 60V 70A (Tc) 33W (Tc) Through Hole TO-220FP

N-Channel 60V 70A (Tc) 33W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF140N6F7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF140N6F7
Single FETs, MOSFETs STF140N6F7
MOSFET N-CH 60V 70A TO220FP

MOSFET N-CH 60V 70A TO220FP

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF140N6F7
MOSFET STF140N6F7
MOSFET N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package

MOSFET N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package

Buy Now Datasheet
Mosfet, N-Ch, 60V, 70A, 175Deg C, 33W; Transistor Polarity Stmicroelectronics - 26AH0165 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 70A, 175Deg C, 33W; Transistor Polarity Stmicroelectronics
26AH0165
Mosfet, N-Ch, 60V, 70A, 175Deg C, 33W; Transistor Polarity Stmicroelectronics 26AH0165
MOSFET, N-CH, 60V, 70A, 175DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 70A, 175DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF140N6F7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF140N6F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF140N6F7
MOSFET N-CH 60V 70A TO220FP

MOSFET N-CH 60V 70A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260934-STF140N6F7 497-16970-ND STF140N6F7 STF140N6F7 26AH0165 STF140N6F7
Product Name FETs - Single - STF140N6F7 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 70A, 175Deg C, 33W; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
QG 55 nC
PD 33000 milliwatts 33000 milliwatts
TJ 175 C (347 F) 175 C (347 F)
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