Manufacturer: STMicroelectronics
Win Source Part Number: 1001391-STF12N65M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16.5nC @ 10V
Max Input Capacitance: 535pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 8A MDmesh M2 TO-220FP
MOSFET N-Ch 650V 8A MDmesh M2 TO-220FP
MOSFET N-Ch 650V 8A MDmesh M2 TO-220FP
N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package Product overview: STF12N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.42 Ohm, 8 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.42 Ohm, 8 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF12N65M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 8A TO220FP
N-Channel 650V 8A (Tc) 25W (Tc) Through Hole TO-220FP
MOSFET N-CH 650V 8A TO220FP
MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
MOSFET, N-CH, 650V, 8A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.42ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1001391-STF12N65M2 | 8765639 | 8765639P | 278-STF12N65M2 | STF12N65M2 | 497-15531-5-ND | STF12N65M2 | STF12N65M2 | 26AH0162 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF12N65M2 | MOSFETs | MOSFETs | N-Channel 650 V 0.42 Ohm 8 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 8A, 150Deg C, 25W; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| V(BR)DSS | 650 volts | 650 volts | |||||||
| PD | 25000 milliwatts | 25000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220FP | TO-220; To-220fp | TO-220; TO-220FP | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-3 |
