STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2(045Y) STF11N65M2(045Y)

Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1096867-STF11N65M2(0 45Y) Length: 10.4 mm Input Capacitance: 410 pF Height: 16.4 mm Number of Pins: 3 Width: 4.6 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STF11N65M2(045Y)STF1 1N65M2-045Y; Popularity: Low Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Non-Compliant Element Configuration: Single Max Power Dissipation: 25 W Turn-On Delay Time: 9.5 ns Continuous Drain Current (ID): 7 A Turn-Off Delay Time: 26 ns Drain to Source Resistance: 670 mΩ Gate to Source Voltage (Vgs): 25 V
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Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1096867-STF11N65M2(0 45Y) Length: 10.4 mm Input Capacitance: 410 pF Height: 16.4 mm Number of Pins: 3 Width: 4.6 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STF11N65M2(045Y)STF1 1N65M2-045Y; Popularity: Low Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Non-Compliant Element Configuration: Single Max Power Dissipation: 25 W Turn-On Delay Time: 9.5 ns Continuous Drain Current (ID): 7 A Turn-Off Delay Time: 26 ns Drain to Source Resistance: 670 mΩ Gate to Source Voltage (Vgs): 25 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2(045Y) - 1096867-STF11N65M2(045Y) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2(045Y)
1096867-STF11N65M2(045Y)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2(045Y) 1096867-STF11N65M2(045Y)
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1096867-STF11N65M2(0 45Y) Length: 10.4 mm Input Capacitance: 410 pF Height: 16.4 mm Number of Pins: 3 Width: 4.6 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STF11N65M2(045Y)STF1 1N65M2-045Y; Popularity: Low Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Non-Compliant Element Configuration: Single Max Power Dissipation: 25 W Turn-On Delay Time: 9.5 ns Continuous Drain Current (ID): 7 A Turn-Off Delay Time: 26 ns Drain to Source Resistance: 670 mΩ Gate to Source Voltage (Vgs): 25 V

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1096867-STF11N65M2(045Y)
Length: 10.4 mm
Input Capacitance: 410 pF
Height: 16.4 mm
Number of Pins: 3
Width: 4.6 mm
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): STF11N65M2(045Y)STF11N65M2-045Y;
Popularity: Low
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Non-Compliant
Element Configuration: Single
Max Power Dissipation: 25 W
Turn-On Delay Time: 9.5 ns
Continuous Drain Current (ID): 7 A
Turn-Off Delay Time: 26 ns
Drain to Source Resistance: 670 mΩ
Gate to Source Voltage (Vgs): 25 V

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Transistors STF11N65M2(045Y)
650V 7A 600mΩ@10V,3.5A 25W 3V@250uA 1 N-Channel TO-220FPAB-3 MOSFETs ROHS

650V 7A 600mΩ@10V,3.5A 25W 3V@250uA 1 N-Channel TO-220FPAB-3 MOSFETs ROHS

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number 1096867-STF11N65M2(045Y) STF11N65M2(045Y)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2(045Y) Transistors
rDS(on) 0.6700 ohms
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