STMicroelectronics, Inc. N-Channel 650 V 0.60 Ohm 7 A MOSFET Transistor STF11N65M2(045Y)

N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP narrow leads package Product overview: STF11N65M2(045Y) from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.60 Ohm, 7 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.60 Ohm, 7 A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-STF11N65M2(045Y) can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1096867-STF11N65M2(045Y)
Length: 10.4 mm
Input Capacitance: 410 pF
Height: 16.4 mm
Number of Pins: 3
Width: 4.6 mm
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): STF11N65M2(045Y)STF11N65M2-045Y;
Popularity: Low
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Non-Compliant
Element Configuration: Single
Max Power Dissipation: 25 W
Turn-On Delay Time: 9.5 ns
Continuous Drain Current (ID): 7 A
Turn-Off Delay Time: 26 ns
Drain to Source Resistance: 670 mΩ
Gate to Source Voltage (Vgs): 25 V

650V 7A 600mΩ@10V,3.5A 25W 3V@250uA 1 N-Channel TO-220FPAB-3 MOSFETs ROHS