STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10P6F6 STF10P6F6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102938-STF10P6F6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 340pF @ 48V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10P6F6 - 1102938-STF10P6F6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STF10P6F6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-13831-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF10P6F6 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -60V, -10A, 175Deg C, 20W; Transistor Polarity Stmicroelectronics - 26AH0160 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102938-STF10P6F6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 340pF @ 48V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10P6F6 - 1102938-STF10P6F6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10P6F6
1102938-STF10P6F6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10P6F6 1102938-STF10P6F6
Manufacturer: STMicroelectronics Win Source Part Number: 1102938-STF10P6F6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 340pF @ 48V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1102938-STF10P6F6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.4nC @ 10V
Max Input Capacitance: 340pF @ 48V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - STF10P6F6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF10P6F6
Single FETs, MOSFETs STF10P6F6
MOSFET P-CH 60V 10A TO220FP

MOSFET P-CH 60V 10A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13831-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13831-5-ND
Single FETs, MOSFETs 497-13831-5-ND
P-Channel 60V 10A (Tc) 20W (Tc) Through Hole TO-220FP

P-Channel 60V 10A (Tc) 20W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF10P6F6 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF10P6F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF10P6F6
MOSFET P-CH 60V 10A TO220FP

MOSFET P-CH 60V 10A TO220FP

Supplier's Site
Mosfet, P-Ch, -60V, -10A, 175Deg C, 20W; Transistor Polarity Stmicroelectronics - 26AH0160 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -10A, 175Deg C, 20W; Transistor Polarity Stmicroelectronics
26AH0160
Mosfet, P-Ch, -60V, -10A, 175Deg C, 20W; Transistor Polarity Stmicroelectronics 26AH0160
MOSFET, P-CH, -60V, -10A, 175DEG C, 20W; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -60V, -10A, 175DEG C, 20W; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF10P6F6
MOSFET STF10P6F6
MOSFET P-CH 60V 0.13Ohm 10A STripFET VI

MOSFET P-CH 60V 0.13Ohm 10A STripFET VI

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102938-STF10P6F6 STF10P6F6 497-13831-5-ND STF10P6F6 26AH0160 STF10P6F6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10P6F6 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -60V, -10A, 175Deg C, 20W; Transistor Polarity Stmicroelectronics MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 20000 milliwatts 20000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3
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